Semiconductor nanocrystals in dielectrics: Optoelectronic and memory applications of related silicon-based MIS devices

Horváth, Zs. J.

doi:10.1016/j.cap.2005.07.028

Cited by 28 publications

(11 citation statements)

References 53 publications

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“…Silicon nanocrystals (Si-ncs) have received a great interest in recent decades since they can be very useful in many applications such as for data storage, 1 lasers, 2 or photovoltaics. 3 These silicon nanocrystals are usually embedded in a dielectric matrix, which are often obtained upon high temperature annealing of silicon rich silicon oxide (SRSO) 4 or silicon rich silicon nitride (SRSN).…”

Section: Introductionmentioning

confidence: 99%

Control of silicon nanoparticle size embedded in silicon oxynitride dielectric matrix

Ehrhardt

Ferblantier

Müller

et al. 2013

Journal of Applied Physics

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Équipe 104 : NanomatériauxInternational audienceIn this study, silicon rich silicon oxynitride layers containing more than 15% nitrogen were deposited by electron cyclotron resonance assisted plasma enhanced vapor deposition in order to form silicon nanoparticles after a high temperature thermal annealing. The effect of the flows of the precursor gases on the composition and the structural properties of the layers was assessed by Rutherford backscattering spectroscopy, elastic recoil detection analysis, and infrared spectroscopic measurements. The morphological and crystallinity properties were investigated by energy filtered transmission electron microscopy and Raman spectroscopy. We show that the excess of silicon in the silicon oxynitride layer controls the silicon nanoparticles size. On the other hand, the crystalline fraction of particles is found to be strongly correlated to the nanoparticle size. Finally, the photoluminescence measurements show that it is also possible to tune the photoluminescence peak position between 400 and 800 nm and its intensity by changing the silicon excess in the silicon rich silicon oxynitride matrix

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Section: Introductionmentioning

confidence: 99%

Control of silicon nanoparticle size embedded in silicon oxynitride dielectric matrix

Ehrhardt

Ferblantier

Müller

et al. 2013

Journal of Applied Physics

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“…As we all know, the ultimate reduction in the dimensionality of a semiconductor device will result in a quantum dot. Much attention has been drawn to Si QDs, with promising applications in fields such as optoelectronics [1], photovoltaics [2], and data storage [3]. In order to realize these potential applications of Si QDs, it is essential to develop techniques to control the electronic and optical properties of Si QDs.…”

Section: Introductionmentioning

confidence: 99%

A First‐Principle Study of B‐ and P‐Doped Silicon Quantum Dots

Zeng

2012

Journal of Nanomaterials

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Doping of silicon quantum dots (Si QDs) is important for realizing the potential applications of Si QDs in the fields of Si QDs-based all-Si tandem solar cells, thin-film transistors, and optoelectronic devices. Based on the first-principle calculations, structural and electronic properties of hydrogen terminated Si QDs doped with single Boron (B) or phosphorus (P) are investigated. It is found out that the structural distortion induced by impurity doping is related to the impurity characteristic, impurity position, and the QD size according to the structural analysis. The relative energetic stability of Si QDs with a single impurity in different locations has been discussed, too Furthermore, our calculations of the band structure and electronic densities of state (DOS) associated with the considered Si QDs show that impurity doping will introduce impurity states within the energy gap, and spin split occurs for some configurations. A detailed analysis of the influences of impurity position and QD size on the impurity levels has been made, too.

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“…Silicon quantum dot (Si QD) materials have attracted extensive studies since efficient visible photoluminescence from Si QDs was discovered. Their properties are highly dependent on the dot size due to quantum confinement effects, which allow unique applications in the fields of optoelectronics [1,2], semiconductor memories [3,4] and photovoltaics [5]. The nano-sized silicon particles embedded in an oxide matrix are one of the most promising candidates for the development of integrated optoelectronics and photonics compatible with standard integration technology for Si microelectronics [6,7].…”

Section: Introductionmentioning

confidence: 99%

Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO₂multilayer films

Hao¹,

Podhorodecki²,

Shen³

et al. 2009

Nanotechnology

100

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The effects of the stoichiometry of the Si-rich oxide (SRO) layer, O/Si ratio, on the structural and optical properties of SRO/SiO2 multilayer films were investigated in this work. SRO/SiO2 multilayer films with different O/Si ratios were grown by a co-sputtering technique, and Si quantum dots (QDs) were formed with post-deposition annealing. By transmission electron microscopy (TEM) and glancing incidence x-ray diffraction (GIXRD), it was found that the Si QD size decreases with increases in O/Si ratio. The photoluminescence (PL) spectrum varies with the O/Si ratio in band position, shape and intensity. In addition, it was observed that the absorption edge blue-shifts with increases in the O/Si ratio. The change in the absorption edge is consistent with strengthening quantum confinement effects in Si QDs, as indicated by TEM and GIXRD. The optical properties were also investigated by 2D photoluminescence excitation (2D-PLE) and lifetime measurements. The origin of emission and absorption is discussed based on the absorption, PL, 2D-PLE and decay time measurements.

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Semiconductor nanocrystals in dielectrics: Optoelectronic and memory applications of related silicon-based MIS devices

Cited by 28 publications

References 53 publications

Control of silicon nanoparticle size embedded in silicon oxynitride dielectric matrix

Control of silicon nanoparticle size embedded in silicon oxynitride dielectric matrix

A First‐Principle Study of B‐ and P‐Doped Silicon Quantum Dots

Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO₂multilayer films

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Semiconductor nanocrystals in dielectrics: Optoelectronic and memory applications of related silicon-based MIS devices

Cited by 28 publications

References 53 publications

Control of silicon nanoparticle size embedded in silicon oxynitride dielectric matrix

Control of silicon nanoparticle size embedded in silicon oxynitride dielectric matrix

A First‐Principle Study of B‐ and P‐Doped Silicon Quantum Dots

Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2multilayer films

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Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO₂multilayer films