Semiconductor nanowires for 0D and 1D physics and applications

Samuelson, Lars; Thelander, Claes; Björk, Mikael; Borgström, Magnus T.; Deppert, Knut; Dick, Kimberly A.; Hansen, Adam E.; Mårtensson, Thomas; Panev, N.; Persson, Ann; Seifert, Werner; Sköld, Niklas; Larsson, Magnus; Wallenberg, L. Reine

doi:10.1016/j.physe.2004.06.030

Cited by 186 publications

(138 citation statements)

References 11 publications

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“…[1][2][3][4][5][6] Silicon nanowires ͑SiNW's͒ are especially attractive candidates due to their compatibility with conventional Si technology and due to the accurate control of diameter and electronic properties during synthesis. 7 Furthermore, in recent years SiNW's have been applied as label-free realtime chemical and biological sensors with very high sensitivity and, e.g., capability of single-virus detection.…”

Section: Introductionmentioning

confidence: 99%

Electronic transport through Si nanowires: Role of bulk and surface disorder

et al. 2006

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We calculate the resistance and mean free path in long metallic and semiconducting silicon nanowires (SiNWs) using two different numerical approaches: A real space Kubo method and a recursive Green's function method. We compare the two approaches and find that they are complementary: depending on the situation a preferable method can be identified. Several numerical results are presented to illustrate the relative merits of the two methods. Our calculations of relaxed atomic structures and their conductance properties are based on density functional theory without introducing adjustable parameters. Two specific models of disorder are considered: Un-passivated, surface reconstructed SiNWs are perturbed by random on-site (Anderson) disorder whereas defects in hydrogen passivated wires are introduced by randomly removed H atoms. The un-passivated wires are very sensitive to disorder in the surface whereas bulk disorder has almost no influence. For the passivated wires, the scattering by the hydrogen vacancies is strongly energy dependent and for relatively long SiNWs (L > 200 nm) the resistance changes from the Ohmic to the localization regime within a 0.1 eV shift of the Fermi energy. This high sensitivity might be used for sensor applications.

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Section: Introductionmentioning

confidence: 99%

Electronic transport through Si nanowires: Role of bulk and surface disorder

et al. 2006

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“…[1][2][3][4][5][6][7][8][9][10] A very suitable and versatile technique for nanowire growth is the direct synthesis on a substrate. [11][12][13][14] The fabrication of III-V semiconductor nanowire based devices by such a bottom-up approach ensures the rational use of materials, as the nanowires can be obtained in principle on any substrate.…”

mentioning

confidence: 99%

Photocurrent and photoconductance properties of a GaAs nanowire

Thunich

Prechtel

Spirkoska

et al. 2009

Applied Physics Letters

101

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We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy, and they are electrically contacted by a focused ion beam deposition technique. The observed photocurrent is generated at the Schottky contacts between the nanowire and metal source-drain electrodes, while the observed photoconductance signal can be explained by a photogating effect induced by optically generated charge carriers located at the surface of the nanowire. Both optoelectronic effects are sensitive to the polarization of the exciting laser field, enabling polarization dependent photodetectors. © 2009 American Institute of Physics. ͓DOI: 10.1063/1.3193540͔Semiconductor nanowires have attracted considerable attention for the past few years because of their compelling electronic, mechanical, and optical properties. 1-10 A very suitable and versatile technique for nanowire growth is the direct synthesis on a substrate. [11][12][13][14] The fabrication of III-V semiconductor nanowire based devices by such a bottom-up approach ensures the rational use of materials, as the nanowires can be obtained in principle on any substrate. Here, we report on the optoelectronic properties of photodetectors based on single p-doped GaAs nanowires grown by molecular beam epitaxy ͑MBE͒ with the so-called vapor-liquid-solid method using Ga droplets as self-catalysts. [15][16][17] The nanowires are electrically contacted by metal electrodes using a focused ion beam ͑FIB͒ deposition technique. 18,19 We experimentally identify two dominating optoelectronic processes in the metal-GaAs nanowire-metal photodetectors. On the one hand, there is a photocurrent generated at the Schottky contacts between the GaAs nanowires and the metal sourcedrain electrodes, as recently shown for CdS nanowires. 8 On the other hand, we observe a photoconductance effect, when illuminating the GaAs nanowire far away from the contacts. We interpret the photoconductance effect to arise from band bending effects caused by surface states on the nanowire surface. In particular, optically generated excess electrons are trapped at the surface, where they act as a negative gating voltage on the p-doped nanowires ͑photogating effect͒. At the same time, the optically excited free excess holes raise the Fermi energy of the hole gas within the nanowires ͑photodoping effect͒. Both effects can raise the conductance of the semiconductor circuits. 20,21 We demonstrate that both photocurrent and photoconductance effects are sensitive to the orientation of linear polarized light. The photoconductance ͑-current͒ varies by ϳ35% ͑ϳ15%͒ for the photon polarization being parallel or perpendicular to the direction of the GaAs nanowires. Hereby, the metal-GaAs nanowiremetal circuits act as polarization-sensitive photodetectors, 2 which can be integrated into electronic circuits by the FIBdeposition technique in a very versatile way.Starting point are GaAs nanowires, which are grown by MBE on a SiO 2 covered ͑111͒-oriente...

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“…INTRODUCTION * E-mail: wojto@ifpan.edu.pl; Fax: +48- Studies of semiconductor nanowires (NWs) have recently been strongly intensified [1][2][3] due to the hope of using these 1D structures as "building blocks" for nanoscale electronic and photonic devices [4][5][6]. Prototype NW-based devices working as light-emitting diodes [7] and lasers [2,8], photodetectors [9], resonant tunnelling diodes [10], field effect [6] and single-electron transistors [11], and biochemical sensors [12] have already been demonstrated.…”

mentioning

confidence: 99%

MBE Growth and Properties of ZnTe- and CdTe-Based Nanowires

Wójtowicz¹,

Janik²,

Zaleszczyk³

et al. 2008

J. Korean Phy. Soc.

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We review our results on the growth of ZnTe-and CdTe-based nanowires (NWs) and on their basic structural and optical properties. The nanowires were produced by using molecular beam epitaxy (MBE) with the use of a mechanism of catalytically-enhanced growth. The growth of ZnTe, CdTe, ZnMgTe and ZnMnTe nanowires was performed from elemental Zn, Cd, Mn, Mg and Te sources on the surfaces of (001)-, (110)-and (111)B-oriented GaAs substrates with Au nanocatalysts. The morphological and structural properties of the nanowires were assessed by using X-ray diffractometry, field-emission scanning electron microscopy, and high resolution transmission electron microscopy. Additional studies of the compositions of both the nanowires and the Au-rich nanocatalysts were performed with the use of energy dispersive X-ray spectroscopy. The optical properties of the NWs were assessed by using photoluminescence and Raman-scattering studies performed in both macro and micro modes. The studies revealed that binary and quaternary nanowires with average diameters from 30 to 70 nm and lengths from 1 to 2.6 µm were monocrystalline in their upper parts, their growth axis was 111 , and they grow along the [111] direction of the substrate, independent of the substrate orientation used. A Au-rich (with 20 % Ga) spherical nanocatalyst was always visible at the tip of a nanowire, thus indicating that a vapor-liquid-solid mechanism was responsible for the growth of the ZnTe-and the CdTe-based nanowires. The formation of homogeneous mixed crystal ZnMnTe and ZnMgTe nanowires was demonstrated by measurements of the variation of the lattice constant and by Raman experiments that revealed the expected shift and appearance of new phonon lines and a strong enhancement of the LO-phonon structures for an excitation close to the exciton energy of the NW materials. The photoluminescence from the internal Mn 2+ transition between crystal-field-split energy levels ( 4 T1 → 6 A1) was observed in the ZnMnTe nanowires.

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Semiconductor nanowires for 0D and 1D physics and applications

Cited by 186 publications

References 11 publications

Electronic transport through Si nanowires: Role of bulk and surface disorder

Electronic transport through Si nanowires: Role of bulk and surface disorder

Photocurrent and photoconductance properties of a GaAs nanowire

MBE Growth and Properties of ZnTe- and CdTe-Based Nanowires

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