2018
DOI: 10.1016/bs.semsem.2018.01.001
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Semiconductor Nanowires for Thermoelectric Generation

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Cited by 23 publications
(30 citation statements)
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“…The ZT values reported here are among the best obtained for a silicon-based macroscopic material, with the additional advantage that our silicon-based fabrics are shape-adaptable and produced by large-scale fabrication techniques. The high ZT values obtained here for large-area and adaptable fabrics demonstrate the potential of extending the range of application of nanostructured silicon from very specific niche applications such as micro-thermoelectric generators to a wide spectrum of large-scale scenarios including industrial waste heat recovery 33 , 34 .…”
Section: Resultsmentioning
confidence: 71%
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“…The ZT values reported here are among the best obtained for a silicon-based macroscopic material, with the additional advantage that our silicon-based fabrics are shape-adaptable and produced by large-scale fabrication techniques. The high ZT values obtained here for large-area and adaptable fabrics demonstrate the potential of extending the range of application of nanostructured silicon from very specific niche applications such as micro-thermoelectric generators to a wide spectrum of large-scale scenarios including industrial waste heat recovery 33 , 34 .…”
Section: Resultsmentioning
confidence: 71%
“…The fabric based on silicon nanotubes here presented is one of the first examples of competitive silicon-based thermoelectric generator since most of the works previously reported in the literature (and used for comparison in Fig. 4d ) are based on expensive and critical raw materials such as Bi 2 Te 2.7 Se 0.3 36 , Bi 2 Te 3 37 , 40 , Bi 2 Te 3 -Sb 2 Te 3 34 , and Eu 8 Ga 16 Ge 30 –Sr 0.5 Fe 4 NiSb 12 33 . Furthermore, thanks to the high porosity of the sample, the provided specific power is remarkably high (Fig.…”
Section: Resultsmentioning
confidence: 99%
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“…Moreover, there is a major interest in using silicon due to its high natural abundance and compatibility with microelectronics mainstream fabrication technologies [4]. Silicon nanowires (Si NWs) with diameters in the order of ~100 nm present a significantly reduced  and can be currently obtained with controlled morphology, crystallinity and doping [5,6].…”
Section: Introductionmentioning
confidence: 99%
“…With the improved thermoelectric performance of Si NWs, the importance lays on designing and assembling functional devices able to host dense arrays. However, it is not easy to implement NWs in structures able to use their thermoelectric properties, as their limited length -constrained to the 10-100 µm range due to inherent characteristics of the fabrication processes -makes them highly susceptible to the adverse effects of electrical and thermal contact resistances [6]. While approaches based on horizontal, top-down definition of Si NWs can overcome contact issues, they only allow the growth of nanowires in layer by layer process, with the scaling-up limited by the number of lithography steps [7][8][9].…”
Section: Introductionmentioning
confidence: 99%