Semiconductor Physics

Seeger, Karlheinz

doi:10.1007/978-3-662-02445-4

Cited by 263 publications

(200 citation statements)

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“…This method determines the dominant carrier by measuring the thermoelectric power that appears between the hot and cold ends of a material. 16) If the potential of the hot end is positive, then the predominant charge carriers are electrons. Conversely, if the potential is negative, the predominant charge carriers are holes.…”

Section: Sample Preparation For the Electrical Conductivitymentioning

confidence: 99%

Thermally Activated Cr2O3+x for Elimination of Volatile Organic Compounds

2010

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We have previously shown that oxide semiconductors (for example, TiO 2 , NiO, etc.) exhibit significant catalytic effects when heated at about 350-500C. This is due to the formation of a vast number of highly oxidative holes at high temperatures. Then, we applied the present finding for complete removal of volatile organic compounds (VOCs). In the present investigation, we focused on Cr 2 O 3þx (0 < x < 1) in an attempt to lower the operation temperature of VOC decomposition. We present here how the low-temperature operation proceeds with Cr 2 O 3þx and also elucidate why Cr 2 O 3þx is colored green, on the basis of the temperature dependences of electrical conductivity and Seebeck potential of Cr 2 O 3þx . The green color of Cr 2 O 3þx is found to arise from Cr vacancies in Cr 2 O 3þx , and the vacancies are responsible for the formation of a narrow conduction band or a deep acceptor level, resulting in the low-temperature operation of VOC decomposition.

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Section: Sample Preparation For the Electrical Conductivitymentioning

confidence: 99%

Thermally Activated Cr2O3+x for Elimination of Volatile Organic Compounds

2010

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“…This behaviour is found e.g. with Zener tunneling [10] and was initially used in the empirical description of the small effect no effect no effect no effect no effect -no effect field induced depinning of charge density waves (CDW) [11]. A value of a < 1 can be interpreted as arising from a distribution of depinning potentials (or frequencies)*.…”

Section: Results and Analysismentioning

confidence: 85%

Electrical transport properties of morpholinium-TCNQ2 compounds

Kramer

Brom

Boer

1989

Physica B: Condensed Matter

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Measurements of the frequency and electric field dependence of several low-dimensional semiconductors, belonging to the class of substituted morpholinium-TCNQ 2 compounds, are presented. Large enhancement of the conductivity is seen at frequencies in the MHz region and at electric fields of I to 10 V/cm. An empirical description is given in terms of field (or frequency) activated contributions to the conductivity. It is shown that the functional form of the frequency and field dependence is related to the degree of disorder that is present in the system. The systems should be viewed as disordered conductors (similar to Qn-TCNQ2), rather than as semiconductors.

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“…The position of the Fermi energy in intrinsic material essentially depends on the bandgap and the effective masses of electrons and holes and is temperature dependent. Taking the usual approximate relation for E F as dependent on temperature in intrinsic material (see for example [18]), we find for the dislocation velocity in an intrinsic semiconductor:…”

Section: Kink Migration Energy and Dislocation Mobilitymentioning

confidence: 99%