Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells

Nozik, A. J.; Beard, Matthew C.; Luther, Joseph M.; Law, Matt; Ellingson, Randy J.; Johnson, Justin C.

doi:10.1021/cr900289f

Cited by 1,155 publications

(928 citation statements)

References 210 publications

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“…third generation solar cells [30,31], light emitting diodes [32,33], quantum information processing [25], or infrared photo detectors [34][35][36] among others. The ICEC process first described in atoms was found to be also present in QDs [3].…”

Section: Dr2013mentioning

confidence: 99%

Interatomic Coulombic electron capture in atomic, molecular, and quantum dot systems

Bande

Pont

Gokhberg

et al. 2015

EPJ Web of Conferences

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Abstract. The interatomic Coulombic electron capture (ICEC) process has recently been predicted theoretically for clusters of atoms and molecules. For an atom A capturing an electron e( ) it competes with the well known photorecombination, because in an environment of neutral or anionic neighboring atoms B, A can transfer its excess energy in the ultrafast ICEC process to B which is then ionized. The cross section for e( ) + A + B → A − + B + + e( ) has been obtained in an asymptotic approximation based on scattering theory for several clusters [1,2]. It was found that ICEC starts dominating the PR for distances among participating species of nanometers and lower. Therefore, we believe that the ICEC process might be of importance in the atmosphere, in biological systems, plasmas, or in nanostructured materials. As an example for the latter, ICEC has been investigated by means of electron dynamics in a model potential for semiconductor double quantum dots (QDs) [3]. In the simplest case one QD captures an electron while the outgoing electron is emitted from the other. The reaction probability for this process was found to be relatively large.

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Section: Dr2013mentioning

confidence: 99%

Interatomic Coulombic electron capture in atomic, molecular, and quantum dot systems

Bande

Pont

Gokhberg

et al. 2015

EPJ Web of Conferences

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“…14 Silicon (Si) is one of the most important semiconductors for microelectronic and energy applications, and Si quantum dots (QDs) have also attracted many attentions. [15][16][17][18][19][20][21][22][23] Experimentally, free-standing Si QDs have been synthesized in either liquid phase or gas phase. [24][25][26][27][28] Gas-phase doping of P and B in these free-standing Si QDs with at least partial hydrogen coverage of their surface has also been achieved by introducing dopant precursors (diborane and phosphine) into the plasma.…”

Section: Introductionmentioning

confidence: 99%

Chemical trend of the formation energies of the group-III and group-V dopants in Si quantum dots

Wei

2013

Phys. Rev. B

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Doping behavior in quantum dots (QDs) differs from that in the bulk. Despite many efforts, the doping properties are still not fully understood. Using first-principles methods, we have calculated the formation energies of various group-III acceptors and group-V donors doping at all non-equivalent sites in a Si QD (Si147H100). To analyze the trend of the formation energy, we decompose it into two terms: the unrelaxed formation energy (chemical energy) and the relaxation energy. We find that the unrelaxed formation energy generally increases as the dopant moves from the center of the QD to the surface. The variation of the unrelaxed formation energy in the surface region is explained by the variation of the local potential of the QD and the size effect. The relaxation energy gain increases as the size mismatch between the dopant and Si atom increases. Generally, the relaxation effect becomes more significant as the dopant moves toward the surface of the QD. The trend of the formation energy is determined by the two terms discussed above. If the size mismatch between the dopant and Si atom is small, the trend of the formation energy generally follows that of the unrelaxed formation energy, increasing as the dopant moves from the center to the surface; thus, these dopants have a better chance of staying in the core region. On the other hand, if the size mismatch is large, the relaxation effect dominates and the formation energy decreases, which indicates these dopants cannot enter the core region under equilibrium growth conditions.

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“…The reported semiconductor QDs in QDSSCs were mainly attributed to the binary semiconductor materials. To date, a few ternary semiconductor QDs have been reported in the field of solar cells [30]. Inspired by these researches, the ternary I-III-VI QDs of A I B III C 2 VI (A = Cu, Ag; B = Al, Ga, In; C = S, Se, Te) chalcopyrite semiconductors are expected to exhibit excellent optical properties [31,32].…”

Section: Introductionmentioning

confidence: 99%

Enhanced performance of solar cells via anchoring CuGaS2 quantum dots

et al. 2017

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Ternary I-III-VI quantum dots (QDs) of chalcopyrite semiconductors exhibit excellent optical properties in solar cells. In this study, ternary chalcopyrite CuGaS 2 nanocrystals (2-5 nm) were one-pot anchored on TiO 2 nanoparticles (TiO 2 @CGS) without any long ligand. The solar cell with TiO 2 @CuGaS 2 /N719 has a power conversion efficiency of 7.4%, which is 23% higher than that of monosensitized dye solar cell. Anchoring CuGaS 2 QDs on semiconductor nanoparticles to form QDs/dye co-sensitized solar cells is a promising and feasible approach to enhance light absorption, charge carrier generation as well as to facilitate electron injection comparing to conventional mono-dye sensitized solar cells.

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Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells

Cited by 1,155 publications

References 210 publications

Interatomic Coulombic electron capture in atomic, molecular, and quantum dot systems

Interatomic Coulombic electron capture in atomic, molecular, and quantum dot systems

Chemical trend of the formation energies of the group-III and group-V dopants in Si quantum dots

Enhanced performance of solar cells via anchoring CuGaS2 quantum dots

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