Semiconductor Quantum Dots: Atomic Ordering over Time

Moeck, Peter

doi:10.1081/e-enn3-120013806

Cited by 1 publication

(1 citation statement)

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“…Materials science aspects of heteroepitaxial quantum dot growth are extensively discussed in the above mentioned textbooks, but atomic ordering and phase separation in such heteroepitaxial structures are a relative new field of study [5,6]. This is rather surprising, as it has been known since 1985 that atomic ordering and phase separation exists in basically all technically important heteroepitaxial column IV element, III-V, and II-VI compound semiconductor alloy structures that possess in the disordered state the diamond or sphalerite (zinc blende) structure [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Nominal PbSe nano-islands on PbTe: grown by MBE, analyzed by AFM and TEM

Moeck

Kapilashrami

Lee³

et al.

27th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004.

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Nominal PbSe nano-islands were grown in the Stranski-Krastanow mode on (111) oriented PbTe/BaF 2 pseudo-substrates by molecular beam epitaxy (MBE). The morphology and number density of these islands were assessed by means of atomic force microscopy (AFM). Transmission electron microscopy (TEM) was employed to determine the strain state and crystallographic structure of these islands. On the basis of both AFM and TEM analyses, we distinguish between different groups of islands.

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Section: Introductionmentioning

confidence: 99%