Semiconductor quantum point contact fabricated by lithography with an atomic force microscope

Held, R.; Heinzel, T.; Studerus, P.; Ensslin, Klaus; Holland, M.

doi:10.1063/1.120137

Cited by 96 publications

(53 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is because LAO lithography has been successfully used for fabricating nanodevices based on semiconductors [11,12,13,14,15]. The confinement of charge carriers obtained by LAO is highly specular [16] than that obtained by plasma etching [17], i.e.…”

Section: Pacs Numbersmentioning

confidence: 94%

Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

Masubuchi

Ono

Yoshida

et al. 2009

Applied Physics Letters

156

112

View full text Add to dashboard Cite

We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tapping-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphene nanoribbon (GNR). The conductance of the GNR at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to lateral confinement of charge carriers. These results show that LAO lithography is an effective technique for the fabrication of graphene nanodevices. PACS numbers:Graphene, a single atomic layer of graphite, has a unique band structure [1,2] and exceptionally high carrier mobility [3]. Therefore, it has been used to develop carbon-based electronic devices [4]. To date, graphene nanodevices such as quantum dots [5,6], AharonovBohm rings [7], and nanoribbons [8,9] have been fabricated by conventional electron-beam lithography combined with plasma etching. However, plasma etching introduces defects in graphene [3,7,10], which causes localization of charge carriers [7,10]. Further, this technique cannot be used to control the edge structure of graphene, which is expected to have significant effects on its electronic properties [8]. Therefore, in order to fabricate high-quality devices, we need a new lithography technique that will allow us to perform high-resolution patterning without damaging the graphene layer.Local anodic oxidation (LAO) lithography using atomic force microscope (AFM) is a promising technique for the fabrication of graphene nanodevices. This is because LAO lithography has been successfully used for fabricating nanodevices based on semiconductors [11,12,13,14,15]. The confinement of charge carriers obtained by LAO is highly specular [16] than that obtained by plasma etching [17], i.e. the charge carriers conserve their momentum along the normal to the confinement. Recently, Weng et al. produced insulating trenches in graphene flakes with a thickness of 1-2 atomic layers using tapping-mode AFM [18]. However, in their experiment, the number of graphene layers was not determined, though the LAO conditions such as the width of oxidized area are expected to be totally different for single-layer, bilayer, and multilayer graphene. Geisbers et al. used contact-mode AFM to produce an insulating trench on single-layer graphene [19]. However, * Electronic address: msatoru@iis.u-tokyo.ac.jp † Electronic address: tmachida@iis.u-tokyo.ac.jp the contact-mode AFM cantilever can damage the fabricated device [20]. Further, the transport phenomena of Dirac fermions were not demonstrated clearly in either experiment above [18,19]. In this letter, we describe LAO lithography experiments that were conducted in single-layer, bilayer, and multilayer graphene using tapping-mode AFM. We show that the width of oxidized area depends on the number of graphene layers. We hav...

show abstract

Section: Pacs Numbersmentioning

confidence: 94%

Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

Masubuchi

Ono

Yoshida

et al. 2009

Applied Physics Letters

156

112

View full text Add to dashboard Cite

show abstract

“…by local anodic oxidation of the GaAs surface [13]. Then a thin Ti film was evaporated on the surface and this film was again patterned by local anodic oxidation to form top gates [14].…”

Section: A Sample Detailsmentioning

confidence: 99%

Measurement of the tip-induced potential in scanning gate experiments

et al. 2007

Self Cite

View full text Add to dashboard Cite

We present a detailed experimental study on the electrostatic interaction between a quantum dot and the metallic tip of a scanning force microscope. Our method allowed us to quantitatively map the tip-induced potential and to determine the spatial dependence of the tip's lever arm with high resolution. We find that two parts of the tip-induced potential can be distinguished, one that depends on the voltage applied to the tip and one that is independent of this voltage. The first part is due to the metallic tip while we interpret the second part as the effect of a charged dielectric particle on the tip. In the measurements of the lever arm we find fine structure that depends on which quantum state we study. The results are discussed in view of scanning gate experiments where the tip is used as a movable gate to study nanostructures.

show abstract

“…Quantum point contacts on a 2D electron gas [8] or in metal [10], nanowires [9], single electron devices [11,17], superconducting devices [13] as well as other nanoscale devices involving nanotubes [14] or clusters [15] have been obtained with this technique.…”

Section: Introductionmentioning

confidence: 99%

“…Indeed, local anodization of the surface of a semiconductor [8,9] or of non-noble metals [10][11][12] by the biased tip of an AFM is now a popular method for fabrication of nanoscale quantum devices. Quantum point contacts on a 2D electron gas [8] or in metal [10], nanowires [9], single electron devices [11,17], superconducting devices [13] as well as other nanoscale devices involving nanotubes [14] or clusters [15] have been obtained with this technique.…”

Section: Introductionmentioning

confidence: 99%

Niobium and niobium nitride SQUIDs based on anodized nanobridges made with an atomic force microscope

Faucher

Fournier

Pannetier

et al. 2002

Physica C: Superconductivity

View full text Add to dashboard Cite

show abstract

Semiconductor quantum point contact fabricated by lithography with an atomic force microscope

Cited by 96 publications

References 24 publications

Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

Measurement of the tip-induced potential in scanning gate experiments

Niobium and niobium nitride SQUIDs based on anodized nanobridges made with an atomic force microscope

Contact Info

Product

Resources

About