Semiconductor screen dynamic visible-to-infrared scene converter

Malyutenko, V. K.; Bogatyrenko, V. V.; Malyutenko, O. Yu.; Snyder, Donald R.; Huber, August J.; Norman, James D.

doi:10.1117/12.458090

Cited by 14 publications

(2 citation statements)

References 3 publications

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“…In our recent papers, we have shown [14][15][16][17][18] that indirect wide bandgap semiconductors could form a platform for longer wavelength (λ = 3−12 µm) emitting devices. This principle fundamentals are in possibility to dynamically modulate the thermal emission (TE) output from a semiconductor beyond the fundamental absorption edge (λ > hc/E g , where h is Planck's constant, c is the speed of light, and E g is band gap) by manipulating free charge carrier concentration in a device base (the transparency modulation technique).…”

Section: Understanding the Basicsmentioning

confidence: 99%

Large area Si light emitting device for the mid-wave and long-wave infrared bands

2006

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The design, fabrication technology and parameters are presented for monolithic linear 16-element IR emitter bar and the 8 x 8 stack of bars. Both types of devices are based on the Si p + in + -diodes with the 0.86 x 0.86 mm 2 emitting surface integrated into a single chip and operated at well above room temperatures by the contact double injection of free charge carrier. To bypass Si electronic band structure limitation, we utilized free carrier absorption as a way to monitor material below-bandgap IR thermal emission. At a device temperature T=453 K, nearly 1.0 mW output power and 420 K apparent temperature of IR (3 to 12 µm spectral band) radiation could be achieved with ~0.8% external power efficiency and 0.1 ms rise-fall time. This represents the longer wavelengths, higher operating temperatures and output power from Si spontaneous emitters ever reported.

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Section: Understanding the Basicsmentioning

confidence: 99%

Large area Si light emitting device for the mid-wave and long-wave infrared bands

2006

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“…Also we have shown that Si and Ge monocrystals are easy to generate high-speed (µs range) broadband (3-16 µm) below-bandgap infrared (λ s falls into the free carrier absorption range) scenery through the shorter wavelength above-bandgap pumping (λ p , the band-to-band photo excitation process) of semiconductors 11 (light down conversion process, λ p <<λ s ). While an initial analysis of the TMT has already been done previously 7,8,11 , here we briefly present working principle of this contactless non-conventional IR emitter as well as give more detailed description of Si device parameters. We also discuss TMT technology pros and cons in respect to thermal emitters (Joule heaters) and conventional LEDs based on III-V's.…”

Section: Introductionmentioning

confidence: 99%

Optically pumped Si emitting device for midinfrared band

Malyutenko

Chyrchyk

2006

SPIE Proceedings

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In this report, fundamentals, design, fabrication technology, and parameters are presented for contactless Si photonic emitter operated in the 3-5 um atmosphere transparency window at well above room temperature. To bypass the material band structure limitation, we utilized the above-bandgap light-induced free carrier thermal emission as a way to monitor the below-bandgap radiation that falls into 3 to 5 µm band (light down conversion). Two-facet external power conversion efficiency up to 5% is observed at T~500 K with further improvement to be expected. The device application to the IR dynamic scene simulation as well as it pros and cons in respect to thermal emitters and IR LEDs are also considered.

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Silicon emitter for shortwave infrared (1.6–3 μm) band by light down-conversion

Malyutenko

Bogatyrenko

Tykhonov

2010

Applied Physics Letters

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No silicon-based light emitting diodes exist for shortwave infrared (1.6–3.0 μm) band due to bandgap limitations imposed on luminescence wavelengths. To alleviate this problem, we propose a photonic device in which below-bandgap radiation comes as the result of the thermal emission enhanced by free charge carriers generated by the above-bandgap excitation (light downconversion). With this approach, we demonstrate high-temperature (T>300 K) large-area (20×20 mm2) Si emitter with stable high-power output (∼100 mW/cm2) and prescribed spectrum inside the 1.6–3 μm band for applications such as dynamic scene simulation devices operating at frequencies above 1 kHz.

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Semiconductor screen dynamic visible-to-infrared scene converter

Cited by 14 publications

References 3 publications

Large area Si light emitting device for the mid-wave and long-wave infrared bands

Large area Si light emitting device for the mid-wave and long-wave infrared bands

Optically pumped Si emitting device for midinfrared band

Silicon emitter for shortwave infrared (1.6–3 μm) band by light down-conversion

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