Semiconductor SERS of diamond

Abstract

In this work, we report a favorable diamond substrate to realize semiconductor surface-enhanced Raman spectroscopy (SERS) for trace molecular probes with high sensitivity, stability, reproducibility, recyclability and universality. The boron-doped diamond (BDD) with surface hydrogenation or oxygenation has matched energy levels corresponding to the target molecules and plays a critical role in achieving SERS. The enhancement factor based on BDD substrates can reach 104-105, which approaches those obtained with most nanostructured compound semiconductors and is nearly 3-4 orders of magnitude higher than those of state-of-the-art single-element semiconductors (silicon, germanium, and graphene). The mechanism of SERS is determined to be charge transfer with vibronic coupling, which could enhance the molecular polarizability tensor. Because of its unique properties such as chemical inertness, wide bandgap, modulated doping, surface functionalization, biocompatibility, and high thermal conductivity, the single-element semiconductor diamond can serve a high-performance semiconductor SERS platform with applications in broad fields.

Enhanced Surface-Enhanced Raman Scattering Activity of MoS2–Ag-Reduced Graphene Oxide: Structure-Mediated Excitonic Transition

“…To investigate the contribution of CT to SERS enhancement, we proposed energy level diagrams of the two CT processes in the MoS 2 –Ag-rGO structure, as shown in Figure . The energy band positions of related materials in the system are consistent with those previously reported. , …”

Smart design of high‐performance surface‐enhanced Raman scattering substrates

“… 98 As a wide‐bandgap semiconductor, diamond presents unique properties such as high thermal conductivity and chemical inertness, but the SERS activity of diamond is not satisfactory. Gao et al 99 reported that the bandgap of diamond can be decreased in the boron‐doped diamond (BBD) by hydrogenation or oxygenation on the surface. The band energy of BBD can match with energy levels of molecules, which promotes the PICT progress effectively.…”

Noble Metal‐Free Surface‐Enhanced Raman Scattering Enhancement from Bandgap‐Controlled Graphene Quantum Dots

“…The CM attributed to CT between target molecules and the SERS-active materials can be the critical factor for metalfree SERS-active materials. [29][30][31] Previous work suggests that the sizes of GQDs can affect their SERS performance due to the increased effective CT paths during Raman scattering. [64] In addition, Raman signals of molecules can be enhanced by the laser resonance effect as the energy of CT is matched with the laser excitation energy.…”

“…[14,[20][21][22][23][24][25][26] Consequently, the GQDinduced SERS response can be enhanced by maximizing the charge transfer (CT) [27,28] between the SERS-active materials and probed molecules by precisely engineering the bandgap of the GQD. [29][30][31] Moreover, GQD with graphene-like structure exhibits chemical mechanism (CM)-induced SERS enhancement can provide a platform to study quantum transitions for semiconductor-enhanced SERS. [13,22,32,33] However, the development of GQD-based SERS applications and the understanding of GQD structure on the SERS properties have been hampered because it is challenging to synthesize GQDs with controlled structures in a controlled and scalable manner.In general the GQD synthesis can be classified by topdown and bottom-up methods.…”