2003
DOI: 10.1063/1.1539375
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Semiconductor Silicon as a Selective Emitter

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“…The high-emissivity band exactly locates within the band-edge of the TPV cell. The intrincisity 16 and the thin thickness 17 of the PECVD-synthesized silicon contribute to the suppression of the free-carrier thermal emission in the sub-bandgap wavelength range (see detailed analysis in Note S2). With the capability of adaptive tuning of in situ emissivity at the actual TPV operating temperatures, our machine-learning optimization workflow realizes a closed loop for the engineering of practical thermal emitters.…”
Section: Performance Of the Tpv Systemmentioning
confidence: 99%
“…The high-emissivity band exactly locates within the band-edge of the TPV cell. The intrincisity 16 and the thin thickness 17 of the PECVD-synthesized silicon contribute to the suppression of the free-carrier thermal emission in the sub-bandgap wavelength range (see detailed analysis in Note S2). With the capability of adaptive tuning of in situ emissivity at the actual TPV operating temperatures, our machine-learning optimization workflow realizes a closed loop for the engineering of practical thermal emitters.…”
Section: Performance Of the Tpv Systemmentioning
confidence: 99%