Semiconductor steady state defect effective Fermi level and deep level transient spectroscopy depth profiling

Chin, Ken K.; Cheng, Zimeng

doi:10.1088/1674-4926/37/9/092003

Cited by 3 publications

(2 citation statements)

References 14 publications

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“…A deep level transient spectroscopy study has also been conducted to analyze the defects in CdS/CdTe solar cell and their effect on the photovoltaic performance parameters. The energy level distribution appears to be different when compared to the energy level distribution with heat 20,21 . For the solar cell's electrode material, a Na‐embedded carbon NW design has also been studied 22 .…”

Section: Introductionmentioning

confidence: 99%

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Technology Computer‐Aided Design device simulation of nanowall‐based CdS/CdTe solar cell for energy conversion

Kumar,

Rahamathulla,

Ilango

et al. 2023

Energy Storage

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An innovative and novel electrode design for a Nanowall (NW)‐based solar cell has been proposed and demonstrated previously. In this work, this concept has been implemented utilizing Technology Computer‐Aided Design (TCAD) software SILVACO in NW‐based n‐CdS/ p‐CdTe solar cell to illustrate its potential for NW‐based solar cell technology. The device's photovoltaic parameters have been investigated as a function of geometrical factors like NW height and CdS window layer thickness, as well as parameters like mid‐gap and interface defects. The influence of the increase in the NW height seems to be increasing the photovoltaic parameters such as short circuit current density (), fill factor (FF), and power conversion efficiency (Eff) of the device. Increasing the depth of the CdS window layer has shown a slight decrease in the photovoltaic parameters. Besides, the effect of the defect density mid‐gap acceptor‐like states in the CdS layer and at the interface has also been simulated. It has been found that by increasing the mid‐gap defect states, a drop of 38, 18, and 45% in , FF, and Eff respectively has been observed with a very small rise of 4% in . It has also been observed that increasing the defect states causes not only a decrease in , FF, and Eff, but also an increase in blue loss in the lower wavelength range. Moreover, mid‐gap defect states seem to degrade the photovoltaic parameters much more severely than the interface defect states at the nanoscale dimension.

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Section: Introductionmentioning

confidence: 99%

“…The energy level distribution appears to be different when compared to the energy level distribution with heat. 20,21 For the solar cell's electrode material, a Naembedded carbon NW design has also been studied. 22 An increase in the power conversion efficiency of 8.89% has been observed compared to the 4.56% of perovskite solar cells.…”

Section: Introductionmentioning

confidence: 99%

Technology Computer‐Aided Design device simulation of nanowall‐based CdS/CdTe solar cell for energy conversion

Kumar,

Rahamathulla,

Ilango

et al. 2023

Energy Storage

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Close spaced sublimation deposition of CdTe layers with process gas oxygen for thin film solar cells

et al. 2017

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Detection of electron emission as DLTS signal in CdTe solar cells

Ding

Cheng

Tan

et al. 2016

Journal of Applied Physics

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This work identifies an incongruity in the detection of the minority carrier signal in CdTe solar cells during the deep level transient spectroscopy (DLTS) measurement. Use of quasi-Fermi level instead of Fermi level of majority carriers to estimate the probability of emitting carriers seems to correct the ambiguity. During the experiment, signals from minority carrier traps (electron traps) were detected by using a long filling pulse time instead of an electron injection pulse. The DLTS measurements of CdTe solar cells observed a single electron trap with energy level EE1 = 0.47 eV, and two hole traps with energy levels, EH1 = 0.17 eV and EH2 = 0.27 eV. The possibility of any impact from the back contact was excluded, and the phenomenon was clarified by the simulation. It was further observed that when the condition of quasi-Fermi level is considered, the results of calculated probability were significantly different from that of the results that used only Fermi level of majority carriers. The simulations further aided the explanation of the defect behavior in DLTS measurements and the overlapping phenomenon of the capacitance spectrum of hole and electron traps.

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Semiconductor steady state defect effective Fermi level and deep level transient spectroscopy depth profiling

Cited by 3 publications

References 14 publications

Technology Computer‐Aided Design device simulation of nanowall‐based CdS/CdTe solar cell for energy conversion

Technology Computer‐Aided Design device simulation of nanowall‐based CdS/CdTe solar cell for energy conversion

Close spaced sublimation deposition of CdTe layers with process gas oxygen for thin film solar cells

Detection of electron emission as DLTS signal in CdTe solar cells

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