Semiconductor thickness effects in the double-gate SOI MOSFET

Majkusiak, B.; Janik, T.; Walczak, J.

doi:10.1109/16.669563

Cited by 89 publications

(43 citation statements)

References 15 publications

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“…In the quantum case, the density profile has two maxima situated within the Silicon film at several nanometers depth from each interface. Our results are in perfect concordance with (Majkusiak et al, 2002), where quantum effects are simulated using the solution of the 1-D Schrödinger equation. The drain current is splitted in two separate channels, but they are no more located at the interface as in the classical case.…”

Section: Static Characteristicssupporting

confidence: 71%

3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation

Munteanu¹,

Autran²

2011

Numerical Simulations - Applications, Examples and Theory

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Section: Static Characteristicssupporting

confidence: 71%

3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation

Munteanu¹,

Autran²

2011

Numerical Simulations - Applications, Examples and Theory

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“…Similar calculations have been carried out in the past [20], and more recently [17]. The numerical procedure used here is identical to that described in [21], and has successfully been used by some of the authors in a Monte Carlo simulator to compute the electron mobility including inversion-layer quantization [22], [23].…”

Section: Numerical Calculationmentioning

confidence: 77%

“…However, in the case of a symmetric DGMOSFET (with the two gates of the same material and the 0018-9383/00$10.00 © 2000 IEEE same bias voltage applied to them), if we integrate in the entire silicon layer, the inversion-layer centroid would be placed right in the middle of the silicon film, due to the symmetry of the inversion-charge distribution. A definition that can provide more information than this obvious result arises if we integrate to only half of the silicon film [17] ( 2) where is the silicon layer thickness, is the modulus of the electron charge, is the modulus of the inversion charge per unit area, and the origin of the coordinate is placed at the top interface, as shown in Fig. 1.…”

Section: The Inversion-layer Centroidmentioning

confidence: 99%

Effects of the inversion-layer centroid on the performance of double-gate MOSFETs

López‐Villanueva

Cartujo-Cassinello

Gamiz

et al. 2000

IEEE Trans. Electron Devices

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Abstract-The role of the inversion-layer centroid in a double-gate metal-oxide-semiconductor field-effect-transistor (DGMOSFET) has been investigated. The expression obtained for the inversion charge is similar to that found in conventional MOSFET's, with the inversion-charge centroid playing an identical role. The quantitative value of this magnitude has been analyzed in volume-inversion transistors and compared with the value obtained in conventional MOSFETs. The minority-carrier distribution has been found to be even closer to the interfaces in volume-inversion transistors with very thin films, and therefore, some of the advantages assumed for these devices are ungrounded. Finally, the overall advantages and disadvantages of double-gate MOSFET's over their conventional counterparts are discussed.

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“…It has been reported that these thickness variations, and the corresponding fluctuation in subband energy levels along the channel illustrated in Fig. 1(b), introduce additional scattering and mobility degradation for body thicknesses below 4 nm [10], [11], [16].…”

Section: -D Monte Carlo Simulation Of the Impact Of Quantum Confinemmentioning

confidence: 96%

3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

Riddet

Brown

Alexander

et al. 2007

IEEE Trans. Nanotechnology

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Abstract-For the scaling of ultrathin body double gate (UTB DG) MOSFETs to channel lengths below 10 nm, a silicon body thickness of less than 5 nm is required. At these dimensions the influence of atomic scale roughness at the interface between the silicon body and the gate dielectric becomes significant, producing appreciable body thickness fluctuations. These fluctuations result in a scattering potential related to the quantum confinement variation within the channel which, similarly to the interface roughness scattering, influences the mobility, the drive current and the intrinsic parameter variations. In this paper we have developed an ensemble Monte Carlo simulation approach to study the impact of quantum confinement scattering on the transport in sub-10 nm UTB DG MOSFETs, and the corresponding intrinsic parameter variations. By comparing the Monte Carlo simulations with driftdiffusion simulations we quantify the important contribution of the quantum confinement related scattering to the current fluctuations in such devices.

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Semiconductor thickness effects in the double-gate SOI MOSFET

Cited by 89 publications

References 15 publications

3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation

3-D Quantum Numerical Simulation of Transient Response in Multiple-Gate Nanowire MOSFETs Submitted to Heavy Ion Irradiation

Effects of the inversion-layer centroid on the performance of double-gate MOSFETs

3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

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