The formation of a metal/PTCDA (3, 4, 9, 10-perylenetetracarboxylic dianhydride) interface barrier is analyzed using weak chemisorption theory. The electronic structure of the uncoupled PTCDA molecule and of the metal surface is calculated. Then, the induced density of interface states is obtained as a function of these two electronic structures and the interaction between both systems. This induced density of states is found to be large enough (even if the metal/PTCDA interaction is weak) for the definition of a Charge Neutrality Level for PTCDA, located 2.45 eV above the highest occupied molecular orbital. We conclude that the metal/PTCDA interface molecular level alignment is due to the electrostatic dipole created by the charge transfer between the two solids.Electronic materials made of molecular films are a fast developing field, with many potential applications in organicbased devices. Designing new organic-based materials requires a detailed understanding of the different processes occurring in these devices. In particular, metal/organic and semiconductor/organic interface barriers play a decisive role [1,2]. However, the formation of barriers is not yet well understood.In the Schottky-Mott model of metal/organic interfaces, it is assumed that no interface dipole is formed at the junction, and that the position of molecular levels with respect to the metal Fermi level is defined by vacuum level alignment. This situation was disproved by Narioka et al.[3] who, using ultra-violet photoemission spectroscopy (UPS), found large interface dipoles (∼ 0.5 − 1.0eV ) at several metal/organic interfaces. Independent data by Hill et al.[4] confirmed this conclusion. Various mechanisms are believed to operate simultaneously at these interfaces, and several models have been advanced [1,2]. Metal-molecule chemical reaction has been seen to create interface gap states that pin the Fermi level [5], a situation that is analogous to that described by the Unified Defect Model proposed for inorganic semiconductor/metal interfaces [6]. Compression of the metal surface electronic tail by adsorbed molecules, leading to vacuum level interface shift (the "pillow" effect), has also been proposed as a general metal/organic interface mechanism [7,8,9].In this letter, we explore the first application to a metal/organic interface of the Induced Density of Interface (or virtual) States (IDIS) Model [10]. We study a metal/PTCDA (3, 4, 9, 10-perylenetetracarboxylic dianhydride) interface and analyze how the chemical interaction between the organic molecule and the metal creates an IDIS in the organic energy gap. Our calculations show that, although the chemical interaction is weak, the IDIS is large enough that a Charge Neutrality Level (CNL) of the organic molecule can be defined. Our results show that the interface Fermi level E F is pinned at the CNL, a situation similar to that described for the formation of Schottky barriers at conventional semiconductor/metal junctions.In this theoretical analysis, we study the metal/PTCDA interact...