Wide-bandgap semitransparent perovskite photovoltaics are emerging as one of the ideal candidates for building-integrated photovoltaics (BIPV). However, surface defects in inorganic CsPbBr 3 perovskite prepared by vapor deposition severely limit the optoelectronic performance of perovskite solar cells. To address this issue, a strategy of doping a trace amount of KBr into perovskite by vapor deposition is adopted, effectively improving the quality of the film, reducing surface defect concentration, and enhancing the transportation and extraction of charge carriers. Simultaneously, fully physical vapor deposition technology is employed to fabricate perovskite solar cells with an average visible light transmittance of 44%. These devices exhibited an ultrahigh open-circuit voltage of 1.55 V and a superior power conversion efficiency (PCE) of 7.28%, demonstrating excellent moisture and heat resistance. Moreover, the corresponding 5 cm × 5 cm modules achieve a PCE of 5.35% with great thermal insulation capability. This work provides an approach for fabricating highly efficient all-inorganic perovskite solar cells with high average visible light transmittance, demonstrating new insights into their application in building-integrated photovoltaics.