In
this work, we report the first-ever fabrication of solution-processed
Se–Te alloy thin films for photovoltaic applications using
an amine–thiol solvent system. By controlling the relative
quantity of Se and Te in ethylenediamine–ethanethiol (EN–ET)
solution mixtures, films with different Se/Te ratios were fabricated
at temperatures as low as 200 °C with phase-pure material synthesis
and uniform homogenous alloying. These composition variations then
successfully demonstrated band gap variation from 1.80 eV for pure
Se to 1.18 eV for a film with 60% Se and 40% Te that closely matches
the theoretical values calculated from Vegard’s law for these
materials. Using the evaporation process, the isolation of chalcogen
complexes from the EN–ET solution was performed, which was
followed by the addition of foreign solvents like dimethyl sulfoxide,
dimethyl formamide, and ethanolamine, which enabled the fabrication
of better quality films using the spin coating process, minimizing
the porosity and increasing the uniformity of the film. A preliminary
device fabricated from these films showed diode characteristics with
encouraging photovoltaic performance (a power conversion efficiency
of 1.11%) that demands further optimization with film fabrication,
selection of device architecture, and detailed defect analysis for
this material.