2021
DOI: 10.3390/mi12080913
|View full text |Cite
|
Sign up to set email alerts
|

Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes

Abstract: Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. However, as technology nodes shrink, RRAM faces many issues, which can significantly degrade RRAM performance. Therefore, it is necessary to optimize the sensing schemes to improve the application range of RRAM. In this paper, the issues faced by RRAM in advanced technol… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2022
2022
2023
2023

Publication Types

Select...
3
2

Relationship

0
5

Authors

Journals

citations
Cited by 8 publications
(1 citation statement)
references
References 82 publications
0
1
0
Order By: Relevance
“…The resistive random access memory (RRAM) is developing rapidly benefiting from its advantages of ultrahigh speed, low cost, simple structure, high density, compatibility with standard semiconductor process technology and superior memory performances. [4][5][6][7][8][9][10][11][12] The merits mentioned above make a RRAM device a competitive candidate for the simulation of neuromorphic synapses and the application in non-volatile memory technology. 13,14 A RRAM device consists of two electrodes and a dielectric sandwiched between them, which changes its working state by changing the applied electrical stimulus.…”
Section: Introductionmentioning
confidence: 99%
“…The resistive random access memory (RRAM) is developing rapidly benefiting from its advantages of ultrahigh speed, low cost, simple structure, high density, compatibility with standard semiconductor process technology and superior memory performances. [4][5][6][7][8][9][10][11][12] The merits mentioned above make a RRAM device a competitive candidate for the simulation of neuromorphic synapses and the application in non-volatile memory technology. 13,14 A RRAM device consists of two electrodes and a dielectric sandwiched between them, which changes its working state by changing the applied electrical stimulus.…”
Section: Introductionmentioning
confidence: 99%