Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic

Shashkin, V. I.; Vostokov, N. V.

doi:10.1109/jeds.2013.2252235

Cited by 7 publications

(5 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…19,20 One strategy produces asymmetric current via metal-semiconductor-metal (MSM) structures, which consists of two MS junctions with distinct Schottky barriers connected back to back. 21,22 One Schottky barrier MS interface in the MSM structure is forward biased when a non-zero bias voltage is applied, while the other one is reversed biased. The other MS interface further modulates the current so that the backward current also varies with voltage compared to a single Schottky barrier MS diode.…”

Section: Introductionmentioning

confidence: 99%

Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts

Han

Xia

et al. 2023

Preprint

View full text Add to dashboard Cite

In recent years, the two-dimensional (2D) semiconductor α-In2Se3 has great potential for applications in the fields of electronics and optoelectronics due to its spontaneous iron electrolysis properties. Through ab initio electronic structure calculations and quantum transport simulations, the interface properties and transport properties of α-In2Se3/Au contacts with different polarization directions are studied, and a two-dimensional α-In2Se3 asymmetric metal contact design is proposed. When α-In2Se3 is polarized upward, it forms an n-type Schottky contact with Au, while when α-In2Se3 is polarized downward, it forms a p-type Schottky contact with Au. More importantly, significant rectification effect is found in the asymmetric Au/α-In2Se3/Au field-effect transistor. The carrier transports under positive and negative bias voltages are found to be dominated by thermionic excitation and tunneling, respectively. These findings provide guidance for the further design of 2D α-In2Se3-based transistors.

show abstract

Section: Introductionmentioning

confidence: 99%

Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts

Han

Xia

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

“…In semiconductor devices, metal–semiconductor (MS) junctions/interfaces play a pivotal role 15 , 16 . One strategy produces asymmetric current via metal–semiconductor-metal (MSM) structures, which consists of two MS junctions with distinct Schottky barriers connected back to back 17 , 18 . One Schottky barrier MS interface in the MSM structure is forward biased when a non-zero bias voltage is applied, while the other one is reversed biased.…”

Section: Introductionmentioning

confidence: 99%

Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts

Han,

Xia,

et al. 2023

Sci Rep

View full text Add to dashboard Cite

In recent years, the two-dimensional (2D) semiconductor α-In2Se3 has great potential for applications in the fields of electronics and optoelectronics due to its spontaneous iron electrolysis properties. Through ab initio electronic structure calculations and quantum transport simulations, the interface properties and transport properties of α-In2Se3/Au contacts with different polarization directions are studied, and a two-dimensional α-In2Se3 asymmetric metal contact design is proposed. When α-In2Se3 is polarized upward, it forms an n-type Schottky contact with Au. While when α-In2Se3 is polarized downward, it forms a p-type Schottky contact with Au. More importantly, significant rectification effect is found in the asymmetric Au/α-In2Se3/Au field-effect transistor. The carrier transports under positive and negative bias voltages are found to be dominated by thermionic excitation and tunneling, respectively. These findings provide guidance for the further design of 2D α-In2Se3-based transistors.

show abstract

“…In contrast with the evidence of rectifying capabilities up to very high frequency, the analytical models of the THz rectification available in literature, mainly based on lamped equivalent circuits, show in general 1/ω 2 dependence. For instance, in [11] an equivalent circuit, with parameters obtained from low-frequency measurements, is used for the development of an extended model of the Schottky barrier, while in [12] contact skin effect, and bulkspreading impedance was adopted. Nevertheless, a simply lumped barrier impedance was used.…”

Section: Introductionmentioning

confidence: 99%

A Model of High-Frequency Self-Mixing in Double-Barrier Rectifier

Palma

Rao

2018

J Infrared Milli Terahz Waves

View full text Add to dashboard Cite

In this paper, a new model of the frequency dependence of the double-barrier THz rectifier is presented. The new structure is of interest because it can be realized by CMOS image sensor technology. Its application in a complex field such as that of THz receivers requires the availability of an analytical model, which is reliable and able to highlight the dependence on the parameters of the physical structure. The model is based on the hydrodynamic semiconductor equations, solved in the small signal approximation. The model depicts the mechanisms of the THz modulation of the charge in the depleted regions of the doublebarrier device and explains the self-mixing process, the frequency dependence, and the detection capability of the structure. The model thus substantially improves the analytical models of the THz rectification available in literature, mainly based on lamped equivalent circuits.

show abstract

Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic

Cited by 7 publications

References 15 publications

Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts

Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts

Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts

A Model of High-Frequency Self-Mixing in Double-Barrier Rectifier

Contact Info

Product

Resources

About