Sensing schemes for STT-MRAMs structured with high TMR in low RA MTJs

Abstract

In this work, we investigated the sensing challenges of spin-transfer torque MRAMs structured with perpendicular magnetic tunnel junctions with a high tunneling magnetoresistance ratio in a low resistance-area product. To overcome the problems of reading this type of memory, we have proposed a voltage sensing amplifier topology and compared its performance to that of the current sensing amplifier in terms of power, speed, and bit error rate performance. We have verified that the proposed sensing scheme offers a substantial improvement in bit-error-rate performance. To enumerate the read operations of the proposed sensing scheme with the proposed cross-coupled capacitive feedback technique on the clamped circuity have successfully been performed a 2.5X reduction in average low power and a 13X increase in average reading speed compared with the previous works due to its device structure and the proposed circuit technique.

The Relationship between Annealing Temperatures and Surface Roughness in Shaping the Physical Characteristics of Co40Fe40B10Dy10 Thin Films

“…It comprises an insulating barrier layer situated between two ferromagnetic metal layers [5,6]. The tunneling magnetoresistance (TMR) ratio of MTJ, critical switching current density of magnetization, power consumption, and other features are all strongly related to the ferromagnetic layer type and structure, as well as the preparation procedure [7,8]. The best options for ferromagnetic layers are soft magnetic materials with high saturation magnetization (Ms) strength, high Curie temperature (Tc), low coercivity (Hc), high permeability (µ), and low magnetostriction (λ s ) in order to achieve magnetization reversal at a low energy cost.…”