Sensitive detection of photoexcited carriers by resonant tunneling through a single quantum dot

Вдовин, Е. Е.; Makarovsky, O.; Patanè, A.; Eaves, L.; Khanin, Yu. N.

doi:10.1103/physrevb.79.193311

Cited by 9 publications

(4 citation statements)

References 15 publications

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“…By incorporating various combinations and compositions of potential barriers, quantum wells, and/or quantum dot layers into the intrinsic region of the device, it has proved possible to fine tune the carrier dynamics, capture and recombination processes, and to exploit tunneling and confinement effects for applications in photonic and quantum information processing. For example, p-i-n diodes have been used as single photon emitters [4], and as sensitive photodetectors in which a single photoexcited carrier localized in a quantum well or at a quantum dot can produce a significant change in the conductance of the device [5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Quantum oscillations in the photocurrent of GaAs/AlAsp-i-ndiodes

et al. 2014

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We report large amplitude quantum oscillations and negative differential conductance in the bias voltagedependent photocurrent of p-in GaAs diodes with an AlAs barrier in the intrinsic (i) region. The oscillations appear only when the devices are illuminated with above-band gap radiation. They are strongly suppressed by a weak (ß2 T) in-plane magnetic field. Their period, amplitude, and magnetic field dependence are explained in terms of the quantized motion of confined photoexcited electrons and holes in the triangular potential wells formed by the AlAs barrier and the strong electric field in the intrinsic region. With increasing electric field, the energy levels of the electrons (holes) successively reach the top of their confining potentials, thus leading to a larger overlap of their wave functions with the free carriers in the p-(and n-) doped electrodes and to the observed oscillatory modulation of the recombination rate and photocurrent as a function of the applied voltage. The effect on the photocurrent oscillations amplitude of placing a layer of InAs quantum dots in the AlAs barrier layer is also examined.

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Section: Introductionmentioning

confidence: 99%

Quantum oscillations in the photocurrent of GaAs/AlAsp-i-ndiodes

et al. 2014

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“…It is found that embedding the QD layer between the tunnel barriers can improve the multiplication factor; the schematic of this device structure is shown in Figure 1 . For the coulomb potential energy of quantum dot to be greatly changed by nearby localized charge than quantum well, a much higher level of sensitivity (> 1,000%) and a means of opening/closing the current channel with a very high on/off ratio (> 50) were provided [ 5 ]. This structure expands prospects to further improve the performances of QD-RTD for charge-sensitive photon-counting detectors.…”

Section: Introductionmentioning

confidence: 99%

Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode

et al. 2012

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Embedding a quantum dot [QD] layer between the double barriers of resonant tunneling diode [RTD] is proved to be an effective method to increase the sensitivity of QD-RTD single-photon detector. However, the interfacial flatness of this device would be worsened due to the introduction of quantum dots. In this paper, we demonstrate that the interfacial quality of this device can be optimized through increasing the growth temperature of AlAs up barrier. The glancing incidence X-ray reflectivity and the high-resolution transmission electron microscopy measurements show that the interfacial smoothness has been greatly improved, and the photo-luminescence test indicated that the InAs QDs were maintained at the same time. The smoother interface was attributed to the evaporation of segregated indium atoms at InGaAs surface layer.PACS73.40.GK, 73.23._b, 73.21.La, 74.62.Dh

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“…When the upper surface of the diode is illuminated uniformly with unfocused laser light of increasing intensity, the QD resonant peaks shift steadily towards lower bias [16]. However, the shapes, amplitudes, and relative bias positions of the peaks remain approximately the same.…”

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confidence: 95%

“…1(b)]. This jitter is attributed to slow fluctuations in current paths between the contact layers and barrier and it can be eliminated by making fast (< 0:1 s) sweeps of IðVÞ [16]. However, with the low power (2 fW) scanned and focused laser beam, the data remain noise-free [ Fig.…”

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confidence: 99%

Laser Location and Manipulation of a Single Quantum Tunneling Channel in an InAs Quantum Dot

et al. 2012

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We use a femtowatt focused laser beam to locate and manipulate a single quantum tunneling channel associated with an individual InAs quantum dot within an ensemble of dots. The intensity of the directed laser beam tunes the tunneling current through the targeted dot with an effective optical gain of 10(7) and modifies the curvature of the dot's confining potential and the spatial extent of its ground state electron eigenfunction. These observations are explained by the effect of photocreated hole charges which become bound close to the targeted dot, thus acting as an optically induced gate electrode.

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Sensitive detection of photoexcited carriers by resonant tunneling through a single quantum dot

Cited by 9 publications

References 15 publications

Quantum oscillations in the photocurrent of GaAs/AlAsp-i-ndiodes

Quantum oscillations in the photocurrent of GaAs/AlAsp-i-ndiodes

Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode

Laser Location and Manipulation of a Single Quantum Tunneling Channel in an InAs Quantum Dot

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