Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing

Liana, Zohming; Choudhuri, Bijit; Bhowmick, Brinda

doi:10.1149/2162-8777/acb56d

Cited by 5 publications

(2 citation statements)

References 51 publications

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“…It is defined as the ratio of the drain current in the existence of gas molecules to the drain current despite the absence of gas molecule is used. 39 The formula used to compute the sensing reaction is:…”

Section: Results and Analysismentioning

confidence: 99%

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

Mili,

Liana,

Bhowmick

2024

ECS J. Solid State Sci. Technol.

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Metal oxide semiconductor gas sensors are used in various roles and sectors compared to other sensing technology due to their durability, longevity, and sensing capability. The current work proposes a dual-stacked heterogeneous source lateral n-type tunnel field-effect transistor (DSHS-nTFET) for gas sensing applications. In the device’s tunneling junction, the presence of source stack boosts the electric field, reduces tunneling width, and then enhances the band-to-band tunneling. Catalytic metals used as gate contacts for this double source stacking TFET design are explored for the purpose of detecting specific gases. Platinum (Pt), Cobalt (Co), Palladium (Pd), and Silver (Ag) are the metal gate electrodes utilised to sense the target gases, like Carbon-monoxide (CO), Ammonia (NH3), Hydrogen (H2), and Oxygen (O2), respectively. With the aid of the Sentaurus TCAD simulator, the suggested structure has been examined for a number of electrical parameters including electric field, surface potential, drain current, and numerous sensing characteristics pertaining to adsorption of gas molecules. The sensitivity and reliability of the proposed sensor have also beeninvestigated with respect to temperature fluctuations, and it has been shown that the device is largely stable over the 200–400 K range.

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Section: Results and Analysismentioning

confidence: 99%

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

Mili,

Liana,

Bhowmick

2024

ECS J. Solid State Sci. Technol.

Self Cite

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“…Numerous device architecture and optimization approaches such as strain material, heterostructure, vertical shaped, and twodimensional material of carbon allotropes have been explored in present days to fix the major bottleneck of a TFET low On-current [10,11,12,13,14,15]. It has been informed that two-dimensional (2D) material of carbon nanotube (CNT), graphene material, and graphene nanoribbon (GNR) shows a better performance in DC and analog/RF parameters over silicon-based TFET [15,16,17,18].…”

Section: Introductionmentioning

confidence: 99%

Device and Circuit-Level Performance Evaluation of DG-GNR-DMG Vertical Tunnel FET

Liana

Tripathy

Choudhuri

et al. 2023

Preprint

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This work presents the comparative study of Graphene Nanoribbon (GNR) based channel Double Gate (DG) Dual Gate Material (DMG) Vertical tunnel FET performance with all Silicon material TFET. The two-dimensional material GNR has been proposed in the channel material to enhance the device performance due to its low bandgap, high mobility, and high saturation velocity. The proposed device's DC, RF, and circuit-level performance analysis has been carried out for the first time. GNR-based channel VTFET shows a better average subthreshold swing (SSAVG ) of 16 mV/decade compared to Si VTFET (36 mV/decade) at a drain voltage VDS=0.5 V. The study of temperature effects on the DC parameters is also included along with the analog/RF FOMs for the proposed two structures. In addition, the performances are compared with other reported works; it is observed that DG-GNR-DMG-VTFET offers better results than Si-based VTFET and other said TFET work. Finally, circuit-level analysis has been done by designing inverter and ring oscillator circuits for the proposed structures, and performance is compared in these two devices. The market-available Silvaco ATLAS TCAD simulator has been used for device-level simulation. Further, circuit-level analysis has been carried out in the Cadence Virtuoso tool using a look-up table-based Verilog-A model.

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Applying multiple‐channel GNR on 4H‐SiC semiconducting material intensifying hydrogen gas sensor performance

Anvarifard,

Ramezani,

Ghoreishi

2024

Int J Numerical Modelling

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The graphene nanoribbon field effect transistor abbreviated GNR‐FET is seriously emphasized for the hydrogen gas detection owing to attractive properties induced by the graphene material. For the first time, a multiple‐channel GNR deposited on 4H‐SiC semiconducting material is offered to detect the hydrogen gas. The hydrogen gas by different pressures is released to the multiple‐channel GNR to figure out the sensing power of the proposed sensor. The Pd metal is used as catalytic electrode trapping the hydrogen gas by making dipoles on the gate oxide/electrode interface. A Technology computer‐aided design based model from the non‐equilibrium green function (NEGF) method coupled with the Poisson–Schrodinger equation is used to simulate the electrical manner of the proposed gas sensor by workfunction modulation induced by these dipoles. The channel conduction during sensing hydrogen gas is much enhanced owing to the multiple‐channel GNR configuration. Three sensitivity definitions based on threshold voltage, ON current, and OFF current are presented and applied as benchmarks to evaluate the sensing power of the gas sensor. The results have shown the domination of the multiple‐channel GNR as compared to the single GNR sensor.

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Sensitivity and Stability Analysis of Double-Gate Graphene Nanoribbon Vertical Tunnel FET for Different Gas Sensing

Cited by 5 publications

References 51 publications

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor

Device and Circuit-Level Performance Evaluation of DG-GNR-DMG Vertical Tunnel FET

Applying multiple‐channel GNR on 4H‐SiC semiconducting material intensifying hydrogen gas sensor performance

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