Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation

Jagannathan, S.; Loveless, T. D.; Zhang, E. X.; Fleetwood, D.M.; Schrimpf, R.D.; Haeffner, T. D.; Kauppila, J. S.; Mahatme, N. N.; Bhuva, B. L.; Alles, Michael L.; Holman, W.T.; Witulski, A.F.; Massengill, L.W.

doi:10.1109/tns.2013.2283457

Cited by 20 publications

(22 citation statements)

References 12 publications

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“…1(b)], using an Agilent N5245A network analyzer. Calibration was performed before testing, followed by a two-step de-embedding procedure under short and open circuits for all the data analysis [12]. Open and short patterns were used to subtract the effects of parasitic pad capacitances and inductances from the measured S-parameters [11], [13].…”

Section: Methodsmentioning

confidence: 99%

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Chen

Zhang

et al. 2014

IEEE Trans. Nucl. Sci.

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AlGaN/GaN high electron mobility transistors (HEMTs) irradiated with 1.8-MeV protons show more relative degradation in RF power/current gain, cutoff frequency , and maximum oscillation frequency than DC transconductance. These result from radiation-induced increases in fast bulk and surface trap densities, as well as increasing impedance mismatch at high frequencies with increasing proton fluence.-rich MBE devices show less degradation in DC transconductance, but more degradation in RF gain than Ga-rich devices.

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Section: Methodsmentioning

confidence: 99%

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Chen

Zhang

et al. 2014

IEEE Trans. Nucl. Sci.

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“…The positive shift in threshold voltage is attributed to electrons trapped in pre-existing interface traps in the high gate dielectric ( ) [13], [14], and is consistent across the devices of various width dimensions examined. In the commercial 45 nm RF CMOS SOI process, the same device exhibited a (negative) 10% decrease in the threshold voltage due to TID [2]. The slight decrease in on-state current can be attributed solely to the shift in , rather than mobility degradation, as the peak transconductance ( ) was unaffected by TID up to 500 krad( ).…”

Section: Temperature Dependence Of 32 Nm Transistorsmentioning

confidence: 94%

“…The "ON" bias condition provides the maximum electric field across the gate stack, the composition of which was the major change between the 32 nm and 45 nm technology nodes. For direct comparison purposes to previously published 45 nm data [2], the same biases were utilized. Previously published data show that the "ON" bias condition is the worst case bias condition for these technologies [9].…”

Section: Temperature Tid and Rf Stress Experiments Setup Detailsmentioning

confidence: 99%

“…Leakage values at V are shown to illustrate the trends in quiescent current leakage when the transistor is turned fully off. To maintain measurement consistency with previously published data for the 45 nm technology [2], the gate voltage was swept from V to 1 V. However, in the interest of practical circuit design application, the leakage value at V is more useful. In Fig.…”

Section: Temperature Dependence Of 32 Nm Transistorsmentioning

confidence: 99%

“…Relatively small TID parametric degradation, especially when compounded with the effects of process variation and temperature extreme, can lead to analog RF circuit [2], [3]. The strict design guidelines for high-frequency RF applications require precise device characteristics and operation, hence the importance of understanding the effects of TID on DC and RF operation.…”

Section: Introductionmentioning

confidence: 99%

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Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

Haeffner

Loveless

Zhang

et al. 2014

IEEE Trans. Nucl. Sci.

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The impacts of total ionizing dose (TID), temperature and RF stress on the DC and RF performance of a commercial 32 nm RF silicon-on-insulator CMOS technology are presented. Temperature dependence is the overwhelmingly dominant single factor affecting the DC and RF performance, with the combined effects of elevated temperature and TID showing the most pronounced degradation. The most significant effect due to TID is an increase in off-state leakage current. Key DC and RF parameters of this 32 nm RF process degrade less than those of an otherwise similar 45 nm RF SOI CMOS process. The implications of the combined TID and temperature response are discussed for low-power RF design.

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Comparing the TID-induced RF performance degradation of floating body and body contacted 130 nm SOI NMOS transistors

Zhang

Chen

et al. 2020

Microelectronics Reliability

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Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation

Cited by 20 publications

References 12 publications

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

Comparing the TID-induced RF performance degradation of floating body and body contacted 130 nm SOI NMOS transistors

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