Sensor based on a Pt/LaF3/SiO2/SiC structure for the detection of chlorofluorocarbons

Filippov, V. I.; Васильев, А. А.; Терентьев, А. А.; Moritz, W.; Roth, U.

doi:10.1134/1.1259519

Cited by 3 publications

(1 citation statement)

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“…Refractory metal gate SiC devices have been demonstrated for high temperature chemical sensing application by a number of groups [Spetz 2001, Filippov 1999, Hunter 2000, Kim 2001, Nakagomi 2001, Samman 2000, Serina 2001. These include hydrogen and hydrocarbon sensors operating at temperatures from 600K to 1300K.…”

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confidence: 99%

DEVELOPMENT OF SiC DEVICES FOR DIAGNOSTICS AND CONTROL OF COMBUSTION PRODUCTS IN ENERGY PLANT ENVIRONMENTS

Ghosh¹,

Tobias²

2003

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A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the detection of combustion products in power plant environments. The sensor is a catalytic gate field effect device that can detect hydrogen containing species in chemically reactive, high temperature environments. The response of these metal/insulator/SiC (MISiC) devices to reducing gases has been assumed to be due to the reduction in the metal work function at the metal/oxide interface that shifts the capacitance to lower voltages. From in-situ capacitance-voltage measurements taken under sensor operating conditions we have discovered that two independent mechanisms are responsible for the sensor response to hydrogen and oxygen. We present a model of the device response based on the chemically induced shift of the metal/semiconductor barrier height as well as the passivation and creation of charged states at the SiO 2 /SiC interface. The latter mechanism is much slower than the barrier height shift. Preliminary photoemission experiments have been performed to independently monitor the contribution of the two phenomena. We discuss in detail the effect of these results on sensor design and the choice of operating point for high temperature operation.

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Section: Disclaimermentioning

confidence: 99%

DEVELOPMENT OF SiC DEVICES FOR DIAGNOSTICS AND CONTROL OF COMBUSTION PRODUCTS IN ENERGY PLANT ENVIRONMENTS

Ghosh¹,

Tobias²

2003

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Interface states in high temperature SiC gas sensing

Ghosh

Tobias

Ejakov

et al.

Proceedings of IEEE Sensors

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Interface states in high-temperature gas sensors based on silicon carbide

2003

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Silicon carbide (SiC)-based metal-insulator-semiconductor devices are attractive for gas sensing in automotive exhausts and flue gases. The response of the devices to reducing gases has been assumed to be due to a reduced metal work function at the metal-oxide interface that shifts the flat band capacitance to lower voltages. We have discovered that high temperature (700 K) exposure to hydrogen results not only in the flat-band voltage occurring at a more negative bias than in oxygen, but also in the transition from accumulation (high capacitance) to inversion (low capacitance) occurring over a relatively narrow voltage range. In oxygen, this transition is broadened indicating the creation of a high density of interface states. We present a model of the hydrogen/oxygen response based on two independent phenomena: a chemically induced shift in the metal-semiconductor work function difference and the passivation/creation of charged states at the SiO 2 -SiC interface that is much slower than the work function shift. We discuss the effect of these results on sensor design and the choice of operating point.

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Sensor based on a Pt/LaF3/SiO2/SiC structure for the detection of chlorofluorocarbons

Cited by 3 publications

References 1 publication

DEVELOPMENT OF SiC DEVICES FOR DIAGNOSTICS AND CONTROL OF COMBUSTION PRODUCTS IN ENERGY PLANT ENVIRONMENTS

DEVELOPMENT OF SiC DEVICES FOR DIAGNOSTICS AND CONTROL OF COMBUSTION PRODUCTS IN ENERGY PLANT ENVIRONMENTS

Interface states in high temperature SiC gas sensing

Interface states in high-temperature gas sensors based on silicon carbide

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