1996
DOI: 10.1116/1.588499
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Sensor systems for real-time feedback control of reactive ion etching

Abstract: Real-time control of ion density and ion energy in chlorine inductively coupled plasma etch processingPrevious efforts from our group have shown encouraging initial results in stabilizing etch rates versus time during a run by using real-time, multivariable feedback control ͑RTC͒ in an Applied 8300 reactive ion etcher. That work indicated the need for improvements in our sensor systems, both the sensors currently used in feedback control and those monitoring the effects of the control on the wafers being etche… Show more

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Cited by 28 publications
(11 citation statements)
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“…More details about this system can be found in [6]. This allowed comparisons between our Extended Kalman Filter based estimator utilizing a single wavelength, and the etch rate estimates from the spectral reflectometry.…”
Section: B Experimental Resultsmentioning
confidence: 98%
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“…More details about this system can be found in [6]. This allowed comparisons between our Extended Kalman Filter based estimator utilizing a single wavelength, and the etch rate estimates from the spectral reflectometry.…”
Section: B Experimental Resultsmentioning
confidence: 98%
“…This provides average etch rate between successive minima and maxima. • Least Squares Fit [6], [7]: At each time point, a nonlinear least squares optimization problem is posed:…”
Section: A Notationmentioning
confidence: 99%
“…Before process control can be implemented, however, sensors capable of providing useful information in real time are necessary. [1][2][3][4][5] These sensors must also be robust to vibration and other such factors found in industrial manufacturing settings. Additionally, they must be affordable so as to make it cost effective to implement process control on a wide-scale basis.…”
Section: Introductionmentioning
confidence: 99%
“…6 Two such sensors for monitoring the wafer state during plasma processing are spectroscopic ellipsometry ͑SE͒ 7-13 and normal incidence spectroscopic reflectometry ͑SR͒. 1,14,15 Both of these measurement systems are based on thin film interference. In SR, the intensity of the reflected light beam is measured as a function of wavelength.…”
Section: Introductionmentioning
confidence: 99%
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