applications. [3] In order to produce a pressure sensing platform for versatile applications, one of the most important requirements is the ability to cover a wide range of pressures accurately, ranging from as low as 1 kPa to more than 100 kPa. Many studies have been conducted concerning the fabrication of precision pressure sensors based on piezoresistivity, [9] piezoelectricity, [10] capacitance, [11,12] and field-effect transistor (FET) devices. [13][14][15] Piezoresistive sensors have high sensitivity and can be fabricated at low cost because of their simple structure, but, typically, they have nonlinear response and can only detect a narrow range of pressures. [16][17][18] Piezoelectric sensors have rapid response time and dynamic sensing capabilities, but they have a pyroelectric property [1] and unreliable static-sensing characteristics. [19] The operational principle and structure of capacitive type sensors are simple, and they have high sensitivity and compatibility for the measurement of static forces. However, their sensitivities decrease as the sizes of the pixels become smaller for miniaturization. [20,21] In addition, all of the aforementioned types of pressure sensors are controlled by a passive-matrix method, and they exhibit low readout speed, high signal crosstalk, and high power consumption. [22] By contrast, FET-type pressure sensors can be operated with an active-matrix method, which allows high uniformity of the arrays, low power consumption, high Flexible, transparent pressure sensors have numerous potential applications in wearable electronics, soft robotics, health monitoring. In particular, highly sensitive and reliable pressure sensors that cover wide ranges of pressures are promising because they can undergo various external stimulations. Here an unconventional approach is presented for fabricating the active-matrix array of air-dielectric, amorphous oxide semiconductor transistors for transparent, wearable pressure sensors. In the structure of these pressure-sensitive fieldeffect transistors (FETs), the clean interface between the air and the oxide semiconductor channel enables the FETs to have outstanding mobility and negligible electrical hysteresis with rapid and reliable responses as pressure sensors for an extensive range of pressures from 200 Pa to 5 MPa. Also, low processing temperature and high transparency of oxide semiconductors make it possible to fabricate them on plastics with flexibility and transparency. The fabrication of active-matrix pressure sensor arrays demonstrated the realtime monitoring of freely moving, ultralight, liquid droplets on the sensor. In addition, this can be integrated into the fingertips of gloves to monitor the pressure changes that occur during grasping objects. These results illustrate the potential of pressure sensors to provide robust solutions in the next-generation electronics including remote surgery, health monitoring, and robotics.