2000
DOI: 10.1016/s0925-4005(00)00613-4
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Separate structure extended gate H+-ion sensitive field effect transistor on a glass substrate

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Cited by 120 publications
(69 citation statements)
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“…This has been also proven by our recent work which demonstrated that thinner passivations result in an increase of the electrostatic coupling of H + and, therefore, in an improved sensitivity of the ISFET sensors [9]. This functional property has also been exploited for a different reason; to improve the sensors' performance, reliability and lifetime by having the active transducer in a remote location from the chemical sensing site, also known as the extended-gate approach [10,11]. A further deployment of this concept was recently demonstrated by our group, in which discrete Metal-Oxide-Semiconductor FETs (MOSFETs) were employed as the active transducers [12].…”
Section: Introductionmentioning
confidence: 83%
“…This has been also proven by our recent work which demonstrated that thinner passivations result in an increase of the electrostatic coupling of H + and, therefore, in an improved sensitivity of the ISFET sensors [9]. This functional property has also been exploited for a different reason; to improve the sensors' performance, reliability and lifetime by having the active transducer in a remote location from the chemical sensing site, also known as the extended-gate approach [10,11]. A further deployment of this concept was recently demonstrated by our group, in which discrete Metal-Oxide-Semiconductor FETs (MOSFETs) were employed as the active transducers [12].…”
Section: Introductionmentioning
confidence: 83%
“…11 Therefore, the electrical conductivities of the sensing materials as well as of those of the base substrates greatly affect the sensing characteristics of EGFETs. A conducting sensitive material on an appropriate conducting substrate seems to be a basic need for fabrication of an extended gate electrode.…”
mentioning
confidence: 99%
“…3 The operation of the extended-gate field effect transistor is very similar to that of a conventional MOS, except that an additional sensing structure is dipped in the buffer solution. In the study of pH sensitivity of the SnO 2 /ITO glass, the SnO 2 /ITO glass sensing membrane was connected to an instrumentation amplifier (Yin et al, 2000). The instrumentation amplifier was used to measure output response of the SnO 2 /ITO glass in the pH buffer solutions, and the result shows that the sensing membrane, SnO 2 /ITO glass, has a linear pH sensitivity of approximately 59.3mV/pH in the ion concentration ranging between pH 2 and 10.…”
Section: Fig 2 Egfet Modeling Componentsmentioning
confidence: 99%