2013
DOI: 10.1039/c3ra41811a
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Separating InGaN membranes from GaN/sapphire templates through a crystallographic-etch-limited process

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Cited by 5 publications
(2 citation statements)
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“…Non-contact avoids direct contact with the processing material caused by stress influence and impurity doping; Without any chemical corrosives, it has the advantages of environmental protection and green and has incomparable advantages in material removal with other traditional methods (mechanical milling, wet etching, dry etching and lithography, etc.) [14][15][16][17] .…”
Section: Introductionmentioning
confidence: 99%
“…Non-contact avoids direct contact with the processing material caused by stress influence and impurity doping; Without any chemical corrosives, it has the advantages of environmental protection and green and has incomparable advantages in material removal with other traditional methods (mechanical milling, wet etching, dry etching and lithography, etc.) [14][15][16][17] .…”
Section: Introductionmentioning
confidence: 99%
“…Several approaches have presented flexible lightemitting diodes (F-LEDs) by transferring microstructured GaAs/GaN to flexible substrates [7][8][9][10]. And the majority methods have produced flexible and highly efficient thin film GaN-based LEDs by laser lift-off (LLO) technology [11][12][13][14][15].…”
Section: Introductionmentioning
confidence: 99%