Separation mechanism of lattice-bound trace elements from quartz by KCl-doping calcination and pressure leaching

Recent advances in the marketing, impurity characterization and purification of quartz

“…Quartz has cathodoluminescence properties, which can be used to analyze the composition of quartz and its microstructure [60,61] . Figure 11B-E [62] depicts different detection methods employed for analyzing quartz. The SEM-CL (Scanning Electron Microscopy-Cathodoluminescence) technique aids in obtaining a clearer visualization of the microstructural features of quartz, enabling researchers to gain insights into the spatial arrangement of impurities and their impact on the overall composition of the mineral.…”

Advanced Processing Techniques and Impurity Management for High-Purity Quartz in Diverse Industrial Applications

“…This process can reduce the iron content in quartz from 66.4 ppm to 0.8 ppm and the titanium content from 29.3 ppm to 5.5 ppm. Similarly, Lin et al [95] employed 2 wt % KCl with quartz raw materials. They roasted the mixture at 900 • C for 45 h and conducted leaching with 3 mol/L H 2 SO 4 and 0.5 mol/L HF in a sealed reactor at 200 • C for 4 h. This process decreased the iron content in quartz from 1.12 ppm to 0.143 ppm and the titanium content from 5.38 ppm to 4.18 ppm, reducing the total impurity content from 99.2 to 29.4 ppm.…”

New insight into the plastic deformation mechanisms during the SiO2 phase transition process

“…, simple substitution (such as the substitution of Si 4+ by Ti 4+ ), substitution with interstitial charge compensator (such as the substitution of Si 4+ by Al 3+ /Li + ), and silanol groups (the substitution of Si 4+ by 4H + ). 9–13…”

“…7,8 In terms of substitution conguration of a single Si atom, lattice impurities can be divided into three kinds, i.e., simple substitution (such as the substitution of Si 4+ by Ti 4+ ), substitution with interstitial charge compensator (such as the substitution of Si 4+ by Al 3+ /Li + ), and silanol groups (the substitution of Si 4+ by 4H + ). [9][10][11][12][13] Generally, the lattice impurities can be removed via roasting and leaching process. 10,[14][15][16] Within which, the leaching process can only remove the surface impurities, 10 while the lattice impurities can migrate from the intracell to surface during high-temperature roasting process.…”

“…[9][10][11][12][13] Generally, the lattice impurities can be removed via roasting and leaching process. 10,[14][15][16] Within which, the leaching process can only remove the surface impurities, 10 while the lattice impurities can migrate from the intracell to surface during high-temperature roasting process. For instance, Wei et al 16 investigated the migration mechanisms during phase transition from a-quartz to b-quartz, suggesting that the lattice impurity of Al 3+ and Li + migrated from intracell to quartz sand surface via the c axis.…”