Sequential Design of PEALD In–Ga–Zn–O Active Layer for Enhancing TFT Stability

Yang, Hae Lin; Kim, Yoon-Seo; Hwang, Taewon; Kamimura, Sunao; Eizawa, Aya; Teramoto, Takashi; Dussarrat, Christian; Ono, Takashi; Park, Jin-Seong

doi:10.1109/ted.2023.3323444

Cited by 5 publications

(2 citation statements)

References 31 publications

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“…This variance in reactivity between the precursor and the initial surface gave rise to unexpected dopant distribution due to growth delays, significantly influencing the film properties in semiconductor applications. 34 The case of IGZO deposition, as investigated by Yang et al, 206 Furthermore, it is crucial to consider the impact of etching reactions during ligand exchange reactions occurring. For example, there has been an investigation into the nonideal growth in Al-doped ZnO ALD.…”

Section: Semiconductor Tftsmentioning

confidence: 99%

“…This variance in reactivity between the precursor and the initial surface gave rise to unexpected dopant distribution due to growth delays, significantly influencing the film properties in semiconductor applications. 34 The case of IGZO deposition, as investigated by Yang et al, 206 presents another example of the complexity inherent in supercycle method. IGZO thin films were fabricated with alkyl cyclopentadienyl In, TMGa, and DEZ serving as the precursors for indium, gallium, and zinc, respectively.…”

Section: Semiconductor Tftsmentioning

confidence: 99%

See 1 more Smart Citation

Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices

Choi,

Lim,

Shin

et al. 2024

Chem. Mater.

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Dynamic random-access memory (DRAM) devices are essential volatile memory components in most digital devices. With the increasing demand for further low-power and high-density devices, the planar structure of DRAM devices encountered a "memory wall", ushering in an era of 3D DRAM architecture. InGaZnO-based thin-film transistors (IGZO TFTs) have a very low off current (<10 −22 A/μm), representing a solution for new channel materials for next-generation 3D DRAM devices. IGZO TFTs are back-end-of-line (BEOL)compatible, enabling them to move the DRAM peripheral circuitry under the memory array and integrate stacked DRAM cells. IGZO thin films have been widely studied for next-generation flat panel display applications. However, most studies have employed sputtering and solution-based systems, which hinder process compatibility in 3D DRAM devices with complex structures. Atomic layer deposition (ALD) is a viable alternative for solving these challenges. In this paper, we comprehensively review the reported Zn-, In-, Sn-, and Ga-based oxide semiconductors in terms of the ALD process (precursors, reactants, growth temperature, etc.), together with material properties such as purity, crystallinity, and electrical properties.

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Section: Semiconductor Tftsmentioning

confidence: 99%

“…This variance in reactivity between the precursor and the initial surface gave rise to unexpected dopant distribution due to growth delays, significantly influencing the film properties in semiconductor applications. 34 The case of IGZO deposition, as investigated by Yang et al, 206 presents another example of the complexity inherent in supercycle method. IGZO thin films were fabricated with alkyl cyclopentadienyl In, TMGa, and DEZ serving as the precursors for indium, gallium, and zinc, respectively.…”

Section: Semiconductor Tftsmentioning

confidence: 99%