Sequential ion-induced stress relaxation and growth: A way to prepare stress-relieved thick films of cubic boron nitride

Abstract

Articles you may be interested inBinary-collision modeling of ion-induced stress relaxation in cubic BN and amorphous C thin films Appl. Phys. Lett. 90, 181910 (2007); 10.1063/1.2734472 X-ray diffraction study of stress relaxation in cubic boron nitride films grown with simultaneous medium-energy ion bombardment Appl. Phys. Lett. 85, 5905 (2004); 10.1063/1.1836868Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation Dual ion beam deposited boron-rich boron nitride films

Deposition of thick cubic boron nitride films — Mechanisms and concepts

“…The sequential deposition/stress release processes in Table 2 proposed by Kim and Kim [20] and Boyen et al [19], respectively, suffer from a very low effective growth rate and also from a great complexity. Finally, the process described in [18] could never be reproduced while the very recent paper of Bejarano et al [11] suffers from a yet incomplete characterization of the basic and the tribological properties of the film system proposed.…”

Thick c-BN coatings – Preparation, properties and application tests

“…Some research groups succeeded in deposition of thicker c-BN and reported their results in recent publications [5][6][7][8][9][10]. In spite of the useful and impressive results in the publications and the several techniques which were described for deposition of thicker c-BN films in the publications, most techniques have some drawbacks for a transfer to industrial use.…”

Stability of native defects in hexagonal and cubic boron nitride

“…The ion bombardment also causes structural damage and compressive stress that can restrict the film thickness up to 100-200 nm, 11 representing a serious limitation in the development of c-BN thin films. On the other hand, recent studies by Boyen et al 12 have shown that post-deposition ion bombardment over high quality c-BN thin films leads to a strong relaxation of the compressive stresses without destroying the cubic phase.…”