Series connection of IGBT

Jeannin, Pierre-Olivier; Vagnon, Eric; Frey, David; Crébier, Jean-Christophe

doi:10.1109/apec.2010.5433548

Cited by 35 publications

(19 citation statements)

References 7 publications

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“…Voltage sharing problems in devices can result in one device blocking a majority of the voltage and cause unevenly distributed losses within the stack or even instantaneous device failure if overvoltage protections are not included. The problems can be a result of differences in the gate voltage pulses or timing, device characteristics, or parasitic circuit capacitances [6] [7]. An active snubber can help with the former two.…”

Section: A Active Snubber Evaluationmentioning

confidence: 99%

Advanced electrical design for the next generation MV integrated power system converter

Lentijo

Benavides

2011

2011 IEEE Electric Ship Technologies Symposium

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The integrated power system converter is a highpower voltage source inverter suitable for Naval applications which combines the innovative three-level neutral-point piloted topology with state-of-the art 4.5kV press-pack devices. The converter design has included an in depth semiconductor characterization of IGBT/diode press-pack devices from two manufacturers which have been used to study the interactions in the semiconductor and gating electronic interface. Simulation and lab results with an active snubber are shown and discussed. The paper also highlights aspects of the design which make it especially suitable for Naval applications.

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Section: A Active Snubber Evaluationmentioning

confidence: 99%

Advanced electrical design for the next generation MV integrated power system converter

Lentijo

Benavides

2011

2011 IEEE Electric Ship Technologies Symposium

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“…The JFET J2 supports 860V which is clamped by the diode D3 and the JFET J3 supports any voltage increase above 1740V. This cascaded voltage blocking manner is different from the traditional seriesconnection of Si IGBTs [6,9], where, during off-state, all IGBTs are switched off and share the whole voltage equally at any blocking voltage level.…”

Section: A DC Characteristicsmentioning

confidence: 99%

“…This approach has been widely used in the high voltage power conversion applications, such as utility-scale photovoltaic power inverters, railway tractions, and high voltage direct current transmission systems, where low voltage (1.2 kilovolts or 1.7 kilovolts) Si IGBTs are connected in series to form a high voltage switch [6,7]. Series-connection of low voltage devices not only provides high-voltage blocking capability, but also improves switching performance and reduces the cost because a single high voltage switch usually has a much worse performance and is more expensive than low-voltage devices [7].…”

Section: Introductionmentioning

confidence: 99%

Series-connection of SiC normally-on JFETs

Bhalla

Alexandrov

et al. 2015

2015 IEEE 27th International Symposium on Power Semiconductor Devices &Amp; IC's (ISPSD)

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The SiC normally-on JFET is a new member in the family of power devices. It is reliable and robust under hightemperature and high-voltage harsh operatioing conditions due to its pn-junction gate control and the excellent physical and electrical properties of Silicon Carbide. At present, 1200V SiC normally-on JFETs are commercially available and higher voltage JFETs are still under development. There is a strong need for a medium-voltage 4kV-15kV power switch that can be moved into mass production quickly, exploits all the material advantages of SiC technology, and is cost-effective. This work presents an innovative method to realize such a high voltage power switch by series-connecting low voltage SiC normally-on JFETs using a unique circuit topology. This work focuses on the discussions of the operation principle and the experimental demonstrations of the proposed technique.

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“…In [26], a hybrid voltage balancing scheme was presented. The influence of parasitic capacitance on voltage sharing was analyzed in [23] and studied further with a numerical approach in [16]. Most studies mainly focused on voltage balancing at turn-off because the tailed current often makes the turn-off process difficult to control.…”

Section: B Lectotype Of the Igbtmentioning

confidence: 99%

“…The issues are partially mentioned in [17]- [19], but their solutions or analyses are not feasible with respect to our application.…”

Section: Introductionmentioning

confidence: 99%

Development of a Novel 30 kV Solid-state Switch for Damped Oscillating Voltage Testing System

Hóu¹,

Li²,

Li³

et al. 2016

Journal of Power Electronics

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This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.

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Series connection of IGBT

Cited by 35 publications

References 7 publications

Advanced electrical design for the next generation MV integrated power system converter

Advanced electrical design for the next generation MV integrated power system converter

Series-connection of SiC normally-on JFETs

Development of a Novel 30 kV Solid-state Switch for Damped Oscillating Voltage Testing System

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