Series resistance calculation for Ag contacts on single crystal layered p-SnS and p-SnSe compound semiconductors in the wide temperature range

Karadeniz, S.; Tuğluoğlu, Nihat; Şahin, Mehmet; Şafak, Haluk

doi:10.1016/j.mee.2005.04.006

Cited by 26 publications

(3 citation statements)

References 28 publications

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“…By using Eqs. 1 and 2, according to the forward bias I V ln − measurements, the ideality factor and barrier height of the diode can be obtained by following relations 2-4, 25 n q kT…”

Section: Resultsmentioning

confidence: 99%

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Tuğluoğlu

Pakma²,

Akın³

et al. 2023

ECS J. Solid State Sci. Technol.

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We report the results of temperature-dependent barrier properties of Au/NAMA/n-Si Schottky diode in the low temperature range of 80-330 K. The analysis results of thermionic emission theory showed that the barrier height decreases, and the ideality factor increases towards low temperatures, depend on the barrier height inhomogeneities. The obtained results show the presence of a double Gaussian distributions with standard deviations (σ_0) of 0.073 and 0.18 V and mean barrier height (Φ ̅_b0) values of 0.595 and 1.427 eV in the change of 80-140 and 160-330 K, respectively. Moreover, evaluation of the modified Richardson curve, the values of Richardson constant (A^*) of 321.805 and 110.935 A K-2 cm-2, and mean barrier height of 0.606 and 1.422 eV were found for the low- and high-temperature regions, respectively. The A^* value of 110.935 A K-2 cm-2 is close to the theoretical value of 112 A K-2 cm-2 for n-Si. These results proved that there is barrier inhomogeneity.

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“…By using Eqs. 1 and 2, according to the forward bias I V ln − measurements, the ideality factor and barrier height of the diode can be obtained by following relations 2-4, 25 n q kT…”

Section: Resultsmentioning

confidence: 99%

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Tuğluoğlu

Pakma²,

Akın³

et al. 2023

ECS J. Solid State Sci. Technol.

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“…Schottky barrier diodes (SBDs) are highly efficient rectifiers that play a crucial role in the modern electronics industry [1][2][3][4]. These diodes utilize the electrical characteristics of metals and semiconductors to achieve their superior performance.…”

Section: Introductionmentioning

confidence: 99%

Investigation of illumination-dependent electrical and photodiode properties and conduction mechanism of the Al/p-Si contact with Schiff base compound (Pyr-Pic) interlayer

Oruç,

Tezcan,

Tuğluoğlu

et al. 2024

Phys. Scr.

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In this paper, an organic semiconductor, N-(2-((pyren-4-yl)methyleneamino)ethyl)-5- nitropyridin-2-amine (Pyr-Pic), was synthesized and was used as an interfacial organic layer to fabrication of Al/Pyr-Pic/p-Si/Al diode. The device's characteristic parameters were determined under various operating situations using current-voltage (I-V) measurements. Thermionic emission theory (TE), the Cheung methodology, and Norde functions were the three methods used to determine the device's electrical properties, such as the ideality factor, barrier height, and series resistance. Based on the I-V measurements conducted under illumination circumstances, the fabricated device exhibits photoresponse properties in the reverse bias region. An examination of the forward log(I)-log(V) plot of the Al/Pyr-Pic/p-Si diode indicated that ohmic conduction dominates carrier transport in the lower bias regions, while the space-charge-limited current (SCLC) governs transport in the medium bias regions, and the trap-charge limit current (TCLC) mechanism is responsible for transport in the higher bias regions. The current voltage mechanisms in the reverse bias area can be characterized by using Poole-Frenkel emission (PFE) and Schottky emission (SE) theories. The device exhibits photovoltaic characteristics when it is illuminated through an Al electrode. The typical photovoltaic parameters were estimated at room temperature and under illumination conditions.

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“…To improve the device performance further, the temperature-dependent carrier transport properties of metal/SnSe contacts should be thoroughly understood. Previous research has focused on the electrical characterization of metal contacts to single-crystal SnSe. − However, research and information on the transport properties of metal contacts to polycrystalline SnSe is limited. , We prepared the ZnO-nanocoated polycrystalline SnSe with different ALD ZnO cycles and subsequently investigated their electrical properties in terms of carrier transport.…”

Section: Introductionmentioning

confidence: 99%

Schottky Contacts to ZnO-Nanocoated SnSe Powders by Atomic Layer Deposition

et al. 2022

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In this study, SnSe powders are nanocoated with ZnO grown by atomic layer deposition (ALD) with different ALD ZnO pulse cycles. Subsequently, the current transport mechanisms of Pt/ZnO-coated SnSe junctions are electrically investigated. A decrease in the current and an increase in the series resistance are observed at 300 K with increasing ZnO pulse cycles (i.e., increasing the thickness of the ZnO layer). The series resistance is similar at 450 K for all samples. The difference in the barrier height for each sample is insignificant, thus indicating that the ZnO coating marginally alters the barrier height at the Pt/SnSe junction. The inhomogeneous Schottky barrier can explain both the forward and reverse bias current conduction. The lowest ideality factor observed for the SnSe sample with ZnO 100 cycles is related to the lowest standard deviation (i.e., the lowest spatial fluctuation of the barrier height). Furthermore, the electrical conductivity is comparable to that of the sample without ZnO coating, thus suggesting that ZnO-coated SnSe by ALD can be considered to improve the thermoelectric device performance.

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Series resistance calculation for Ag contacts on single crystal layered p-SnS and p-SnSe compound semiconductors in the wide temperature range

Cited by 26 publications

References 28 publications

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Investigation of illumination-dependent electrical and photodiode properties and conduction mechanism of the Al/p-Si contact with Schiff base compound (Pyr-Pic) interlayer

Schottky Contacts to ZnO-Nanocoated SnSe Powders by Atomic Layer Deposition

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