Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes

Salam, Mohamed Abdel; Ayyıldız, E.; Gümüş, Ahmet; Türüt, A.; Efeolu, Hasan; Tüzemen, Sebahattin

doi:10.1007/bf01575093

Cited by 66 publications

(8 citation statements)

References 18 publications

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“…[17] Where β is the voltage coefficient of the effective barrier height φ e used in place of the barrier φ Bo , [18,19] and for an SBD the ideality factor n becomes greater than unity as proposed by Card and Rhoderick. [17] n(V)…”

Section: Resultsmentioning

confidence: 99%

Interface state density analyzing of Au/TiO₂(rutile)/n–Si Schottky barrier diode

Altuntaş

Bengi

Asar

et al. 2010

Surface & Interface Analysis

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Section: Resultsmentioning

confidence: 99%

Interface state density analyzing of Au/TiO₂(rutile)/n–Si Schottky barrier diode

Altuntaş

Bengi

Asar

et al. 2010

Surface & Interface Analysis

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“…From measurements taken on a current density versus applied bias voltage (Figure e), the two diodes showed a turn‐on voltage of 0.7 and 0.3 V, respectively, from a‐IGZO and pc‐IGZO‐based inks with sweeping from −1 to 1 V. The rectifying ratios of 1400 and 675 000, respectively, were obtained from the printed a‐IGZO and pc‐IGZO diodes. The main deviations from linearity of J (current density) – V plots (Figure e) for both diodes at high forward bias voltage were due to the existence of series resistances (153 KΩ for a‐IGZO and 24 KΩ for pc‐IGZO: Table S1, Supporting Information) resulting from the insulating layer, Al 2 O 3 . As such is the case, ideality factors of the both printed diodes were derived to be 3.13 and 3.77, respectively, for a‐IGZO and pc‐IGZO.…”

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confidence: 95%

“…These deviations from the ideal thermionic case are often found in MIS Schottky diodes. The effective barrier heights (Φ b ) were 0.946 and 0.823 eV, respectively, for a‐IGZO and pc‐IGZO, calculated by fitting the forward J – V curve (−1 V < V < 1 V) to the Cheung's function (Table S1 and Figure S7, Supporting Information) . The summary of the said calculated values are shown in Table S1 in the Supporting Information.…”

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confidence: 99%

An Electroactive Binder in the Formulation of IGZO Ink to Print an IGZO‐Based Rectifier for Harvesting Direct Current (DC) Power from the Near Field Communication (NFC) Signal of a Smartphone

Rajbhandari

Vanaraj

Maskey

et al. 2018

Adv Elect Materials

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are fabricated by incorporating the vacuum deposition and printing methods utilizing pentacene at 869 MHz, C60 and pentacene at 300 MHz, C60 and tungsten oxide at 800 MHz and indium gallium zinc oxide (IGZO) at 16.7 GHz, respectively. [5][6][7][8] However, due to the weak nature of the signal generated from the smartphone (<1.5 Vpp), none of the aforementioned rectifiers were able to successfully interlock with the smartphone NFC signal. Furthermore, although all roll-to-roll (R2R) printed inorganic ZnO-PAN (polyaniline)-based diodes were reported to wirelessly transmit the operation power to the passive NFC sensor tag using 13.56 MHz, the rectifying efficiency was held to under 50%. [2][3][4] For the ultra high frequency region, in recent years, the printed silicon microparticles-based diodes have demonstrated the ability to interlock with smartphones using a 1.6 GHz signal. [9,10] However, in spite of the aforementioned achievements in rectifier fabrication, DC power harvesting from the coupled NFC signal of smartphones has not been demonstrated yet due to the high turn-on voltage and low rectifying efficiency of the printed diodes. [3,9,10] As such is the case, in order to harvest DC power with greater than 50% efficiency from the weak NFC signal (<1.5 Vpp) of smartphones, printed flexible rectifiers using high-performing semiconducting ink is still imperative in order to develop cost-effective and flexible NFC-sensor devices capable of interlocking with smartphones.The gravure, among well-known scalable printing methods, has been relatively well explored in terms of practicality in printing the rectifying diodes and thin film transistor (TFT)based devices. The method enables the resolution and reliability of overlay printing registration accuracy to be able to be maintained on printed patterns up to ±20 µm. [11] Therefore, in this work, the gravure method has been extensively explored in order to print a Schottky diode for the fabrication of a rectifier able to harvest DC power from the NFC signal of the smartphone. In order to employ the gravure method in printing the Schottky diode, the formulation of semiconducting ink is the most crucial step. The semiconducting layers should be able to render the Ohmic contacts solely with printed silver electrodes, as only silver nanoparticle-based gravure ink is commercially available. Furthermore, the semiconducting ink needs to have an appropriate viscosity and wetting property in order to print a homogeneous Formulating a high-performing semiconducting ink is crucial toward printing a diode for constructing a direct current (DC) power harvesting device, consisting of an antenna, a diode, and a capacitor, that can rectify the coupled weak near field communication (NFC) (13.56 MHz) signal (<1.5 Vpp) generated from smartphones. To achieve such performance, indium gallium zinc oxide (IGZO)-based semiconducting ink is formulated by developing an electroactive binder, poly(4-styrene sulfonic acid). By reducing the turn-on voltage and providing a good rheological character...

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“…The increase in R s is associated with the high energy barrier of the MgZnO layer, which has a band gap of 5.85 eV. 20 We investigated the current transport process through the MgZnO layer under forward bias to better understand the electrical properties of the MLG/MgZnO/ZnO LED by further examination of its I-V characteristics. A log-log plot of the I-V curve obtained for the MLG/MgZnO/ZnO LED is presented in Fig.…”

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confidence: 99%

“…When the applied voltage exceeds 4 V, the barrier gradually transforms into a triangular shape because of the high electric field, and Fowler-Nordheim (FN) tunneling is expected. 20 The FN tunneling current follows Eq. (1): 21…”

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confidence: 99%

Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode

Kang

Choi

Kim

et al. 2014

Applied Physics Letters

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We report on ultraviolet emission from a multi-layer graphene (MLG)/MgZnO/ZnO light-emitting diodes (LED). The p-type MLG and MgZnO in the MLG/MgZnO/ZnO LED are used as transparent hole injection and electron blocking layers, respectively. The current-voltage characteristics of the MLG/MgZnO/ZnO LED show that current transport is dominated by tunneling processes in the MgZnO barrier layer under forward bias conditions. The holes injected from p-type MLG recombine efficiently with the electrons accumulated in ZnO, and the MLG/MgZnO/ZnO LED shows strong ultraviolet emission from the band edge of ZnO and weak red-orange emission from the deep levels of ZnO.

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Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes

Cited by 66 publications

References 18 publications

Interface state density analyzing of Au/TiO₂(rutile)/n–Si Schottky barrier diode

Interface state density analyzing of Au/TiO₂(rutile)/n–Si Schottky barrier diode

An Electroactive Binder in the Formulation of IGZO Ink to Print an IGZO‐Based Rectifier for Harvesting Direct Current (DC) Power from the Near Field Communication (NFC) Signal of a Smartphone

Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode

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Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes

Cited by 66 publications

References 18 publications

Interface state density analyzing of Au/TiO2(rutile)/n–Si Schottky barrier diode

Interface state density analyzing of Au/TiO2(rutile)/n–Si Schottky barrier diode

An Electroactive Binder in the Formulation of IGZO Ink to Print an IGZO‐Based Rectifier for Harvesting Direct Current (DC) Power from the Near Field Communication (NFC) Signal of a Smartphone

Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode

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Interface state density analyzing of Au/TiO₂(rutile)/n–Si Schottky barrier diode

Interface state density analyzing of Au/TiO₂(rutile)/n–Si Schottky barrier diode