Series resistance imaging of silicon solar cells by lock‐in photoluminescence

Abstract

An advanced method for determining the spatially resolved series resistance of silicon solar cells by lock‐in photoluminescence (LIPL) is presented, which only needs two LIPL images taken at different illumination levels similarly to the photoluminescence (PL) method. However, the LIPL approach does not require the calibration images at short circuit conditions, and it has the merit of improving the signal to noise ratio (SNR) in comparison with the PL method. Furthermore, the Rs images obtained by LIPL are in good agreement with PL, and the LIPL method seems more independent of the acquisition time which could make the acquisition time short. Thus, LIPL could provide a possible approach to achieve more accurate inline characterization of spatially resolved information.

Advanced Series Resistance Imaging for Silicon Solar Cells via Electroluminescence

“…There are different approaches to separate contrasts of a luminescence image based on the model of independent diodes. [ 3–5 ] Other approaches use inhomogeneous illumination [ 6,7 ] or lock‐in photoluminescence [ 8 ] but require additional hardware. Methods [ 9,10 ] that refrain from using the model of independent diodes are complex and not mature yet.…”

Contactless non-destructive imaging of doping density and electrical resistivity of semiconductor Si wafers using lock-in carrierography

“…Lock-in carrierography (LIC) [1], an imaging counterpart of single-element-detector photocarrier radiometry (PCR) [2], is a frequency-domain (FD) photoluminescence (PL)-based quantitative characterization technique that measures photocarrier density distributions, and has been used to characterize electronic transport properties [3][4][5] and electrical parameters [6,7] in various semiconductor materials and devices. The dopant concentration of a semiconductor is an important parameter for starting materials as well as for semiconductor devices.…”