Series resistance study of Schottky diodes developed on 4H-SiC wafers using a contact of titanium or molybdenum

Shili, K.; Karoui, M. Ben; Gharbi, R.; Abdelkrim, M.; Fathallah, M.; Ferrero, Sergio

doi:10.1016/j.mee.2013.02.043

Cited by 12 publications

(3 citation statements)

References 16 publications

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“…Stable reverse blocking and forward conduction properties of a rectifier device necessitate the formation of a material system as Schottky barrier, that has on the one hand a high stability against intermetallic mixing, and on the other hand yields a good ideality factor and, of course, a barrier as low as possible. Different Molybdenum based metal systems have been investigated in literature as Schottky contact material [9] due to their superior physical and chemical properties and stability [10]. It was shown, that the barrier properties of these metal systems can be tuned by the deposition parameters and the SiC surface treatment prior to the metal deposition [11,12].…”

Section: Methodsmentioning

confidence: 99%

SiC MPS Devices: One Step Closer to the Ideal Diode

Elpelt

Draghici

Gerlach

et al. 2018

MSF

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We report on the development of a new generation of SiC Schottky rectifier devices employing a Molybdenum based barrier metal system and a new stripe cell design for field shielding and optimized area utilization. The Schottky barrier height is reduced and thus the conduction losses are decreased significantly. The balance between forward conduction and reverse leakage losses as well as the homogeneity and stability of the new barrier system are investigated carefully.

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Section: Methodsmentioning

confidence: 99%

SiC MPS Devices: One Step Closer to the Ideal Diode

Elpelt

Draghici

Gerlach

et al. 2018

MSF

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“…MS device parameters are known to depend on factors such as applied bias and junction temperature [13,20]. The complexity of the MS diode equation is the foremost reason for the existence of the many extraction methods and their varied simplifying assumptions.…”

Section: Case I -Constant Barrier Heightmentioning

confidence: 99%

A new symmetry-based extraction method of Schottky diode parameters from resistance-compensated I-V characteristics

Ocaya,

Yakuphanoglu

2021

Preprint

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We present a novel resistance-compensated I-V method to extract the series resistance, ideality factor, barrier height and built-in potential of a metal-semiconductor diode. We show that a reduced equation arises from a unique but hitherto unreported symmetry in the Schottky equation when it is written as an ordinary differential equation. In spite of the intense mathematical justification, we show how this new equation is directly applicable to an empirical data set through a simple algorithm. We test the method on a new Al/p-Si/Bi 2 Se 3 /Al Schottky diode and compare it with the Cheung-Cheung method on the same data. The series resistance was found to change exponentially with applied bias with a rate constant that depends on the incident illumination. The barrier height decreased with bias but was independent of the incident illumination. The trends in the results of the method agree strongly with the literature and may yield more accurate diode parameters compared to other electrical methods.

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“…Existing models follow the thermionic emission theory which describes the carriers in the metal=semiconductor junction. [21][22][23] An ideality factor is introduced to fit the theory to measurements. Such a factor is however difficult to analyze, especially when the size of the drift region is varied to optimize the device structure.…”

Section: Introductionmentioning

confidence: 99%

Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

Navarro

Herrera

Zenitani

et al. 2018

Jpn. J. Appl. Phys.

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A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current-voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures.

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Series resistance study of Schottky diodes developed on 4H-SiC wafers using a contact of titanium or molybdenum

Cited by 12 publications

References 16 publications

SiC MPS Devices: One Step Closer to the Ideal Diode

SiC MPS Devices: One Step Closer to the Ideal Diode

A new symmetry-based extraction method of Schottky diode parameters from resistance-compensated I-V characteristics

Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

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