SET analysis of silicon nanotube FET

Jayakumar, Ganesh; Srinivasan, R.

doi:10.1007/s10825-017-0982-y

Cited by 13 publications

(2 citation statements)

References 21 publications

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“…Several crucial physical effects are also taken into account in the simulation, including doping and high field dependent mobility degradation models, impact ionization model, quantum effect model, and Auger and radiative recombination models. [25,26] The parameters of In 0.52 Al 0.48 As and In 0.53 Ga 0.47 As materials are obtained by liner interpolation from the parameters of AlAs, GaAs, and InAs. The temperature is 300 K by default in the simulations.…”

Section: Device Structure and Numerical Methodsmentioning

confidence: 99%

Effect of defects properties on InP-based high electron mobility transistors*

Sun

Chang

et al. 2019

Chinese Phys. B

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The performance damage mechanism of InP-based high electron mobility transistors (HEMTs) after proton irradiation has been investigated comprehensively through induced defects. The effects of the defect type, defect energy level with respect to conduction band E T, and defect concentration on the transfer and output characteristics of the device are discussed based on hydrodynamic model and Shockley–Read–Hall recombination model. The results indicate that only acceptor-like defects have a significant influence on device operation. Meanwhile, as defect energy level E T shifts away from conduction band, the drain current decreases gradually and finally reaches a saturation value with E T above 0.5 eV. This can be attributed to the fact that at sufficient deep level, acceptor-type defects could not be ionized any more. Additionally, the drain current and transconductance degrade more severely with larger acceptor concentration. These changes of the electrical characteristics with proton radiation could be accounted for by the electron density reduction in the channel region from induced acceptor-like defects.

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Section: Device Structure and Numerical Methodsmentioning

confidence: 99%

Effect of defects properties on InP-based high electron mobility transistors*

Sun

Chang

et al. 2019

Chinese Phys. B

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“…In GAA‐SNWTs, the channel is enclosed by the gate from all sides, enhancing the electrostatic control of the channel which reduces the short channel effects [9]. Further, the channel thickness of GAA‐SNWTs (diameter) can readily be scaled down which is the major issue in conventional MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Effect of air spacer in underlap GAA nanowire: an analogue/RF perspective

Gupta

Nandi

2019

IET Circuits, Devices & Systems

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Here, a comprehensive study of the gate-all-around silicon nanowire field effect transistor (FET) (GAA-SNWTs) with source/drain underlap is performed to investigate the influence of air as spacer dielectric, on analogue/RF behaviour of the device. Parasitic capacitances in nanoscale devices contribute a dominating role in overall device capacitances. Introducing air as spacer dielectric (ε SP) in source/drain underlap region, device parasitic capacitances deteriorates, which improves the overall capacitances. Thus, the analogue/RF figure-of-merit (FOM) of the device enhances, rendering the device suitable for low-power high-frequency operations. For targeting low power applications, FOMs are elicited at 10 μA/ μm. It is perceived that intrinsic gain of the device is almost unaltered for distinct spacer dielectric (Si 3 N 4 and air). Frequencies like cutoff frequency (f T) and maximum oscillation frequency (f MAX) of air spacer dielectric-based underlap GAA-SNWTs are enhanced by 2.92 times and 3.11 times, respectively, when contrasted by the Si 3 N 4 spacer-based GAA-SNWTs. This results in higher percentage improvement in RF-FOM in terms of transconductance frequency product (TFP), gain-frequency product (GFP), and gain transconductance frequency product (GTFP).

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Investigation of Single Event Transients on RingFET using 3D TCAD Simulations

Ramya¹,

Nagarajan²

2022

Silicon

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SET analysis of silicon nanotube FET

Cited by 13 publications

References 21 publications

Effect of defects properties on InP-based high electron mobility transistors*

Effect of defects properties on InP-based high electron mobility transistors*

Effect of air spacer in underlap GAA nanowire: an analogue/RF perspective

Investigation of Single Event Transients on RingFET using 3D TCAD Simulations

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