Seven‐inch large‐size synthesis of monolayer hexagonal BN film by low‐pressure CVD

Wu, Chenping; Soomro, Abdul Majid; Sun, Feipeng; Wang, Huachun; Liu, Chuan; Yang, Xiaodong; Kang, Junyong; Cai, Duanjun

doi:10.1002/pssb.201552619

Cited by 15 publications

(10 citation statements)

References 18 publications

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“…By transferring the h-BN layer on a Si substrate assisted by poly(methyl methacrylate) (PMMA), Raman spectra were recorded and shown in Figure S2b. The characteristic peak located at ∼1372 cm –1 confirmed the monolayer of h-BN film. , The LPCVD system for h-BN coating on Cu NWs was setup as schematically shown in Figure a, and the processes of encapsulation were conducted as follows. First, the Cu NW was imprinted onto target substrates such as quartz glass or sapphire and placed side-by-side with the borazane precursor in a quartz boat.…”

Section: Results and Discussionmentioning

confidence: 99%

“…In principle, several crucial issues should be addressed: (1) difficulty in obtaining full coverage of the coating layer, (2) well-conjugated core–shell structure, and (3) inherent invulnerable shell materials. Recently, hexagonal boron nitride (h-BN), one of the prominent members of two-dimensional (2D) materials, has attracted enormous attention due to its excellent properties such as high mechanical strength, high thermal conductivity, planar honeycomb structure, and atomic thickness/smoothness. − The atomic honeycomb structure is constructed by the strong covalent bonds of boron and nitrogen atoms, which can effectively resist the penetration of gas or liquid molecules . As a result, its excellent chemical stability and antioxidant ability under high temperature (∼800 °C) are even superior to GR. , Previous reports have shown the encapsulation of h-BN shells on metallic nanoparticles and NWs.…”

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confidence: 99%

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Cu Nanowires Passivated with Hexagonal Boron Nitride: An Ultrastable, Selectively Transparent Conductor

Liu

Wang

et al. 2020

ACS Nano

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The copper nanowire (Cu NW) network is considered a promising alternative to indium tin oxide as transparent conductors for advanced optoelectronic devices. However, the fast degradation of copper in ambient conditions largely overshadows its practical applications. Here we demonstrate a facile method for epitaxial growth of hexagonal boron nitride (h-BN) of a few atomic layers on interlaced Cu NWs by low-pressure chemical vapor deposition, which exhibit excellent thermal and chemical stability under high temperature (900 °C in vacuum), high humidity (95% RH), and strong base/oxidizer solution (NaOH/H2O2). Meanwhile, their optical and electrical performances remain similar to those of the original Cu NWs (e.g., high optical transmittance (∼93%) and high conductivity (60.9 Ω/□)). A smart privacy glass is successfully fabricated based on a Cu@h-BN NW network and liquid crytal, which could rapidly control the visibility from transparent to opaque (0.26 s) and, at the same time, strongly block the mid-infrared light for energy saving by screening radiative heat. This precise engineering of epitaxial Cu@h-BN core–shell nanostructure offers broad applications in high-performance electronic and optoelectronic devices.

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Section: Results and Discussionmentioning

confidence: 99%

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confidence: 99%

Cu Nanowires Passivated with Hexagonal Boron Nitride: An Ultrastable, Selectively Transparent Conductor

Liu

Wang

et al. 2020

ACS Nano

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“…The detailed fabrication processes can be found in a previously published paper . Monolayer hBN was synthesized on copper foils using a low-pressure CVD system at 1050 °C with pressure <10 –4 Torr following the reported studies . The grown hBN was then transferred onto n-Al 0.4 Ga 0.6 N by applying a PMMA-based wet chemical etching process.…”

Section: Methodsmentioning

confidence: 99%

Nanolayered Graphene/Hexagonal Boron Nitride/n-AlGaN Heterostructures as Solar-Blind Deep-Ultraviolet Photodetectors

Chen

2020

ACS Appl. Nano Mater.

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The spectral specificity of deep-ultraviolet (UV) photodetectors makes them useful in many fields, spanning from disinfection of various surfaces and water purification to optical communication. As silicon-based devices show obvious disadvantages as UV devices because of their low band gap, semiconductor materials with a wide band gap exceeding 4 eV serve as excellent alternatives. In this paper, by the integration of the unique properties of each constituent material, we design a nanolayered graphene/insulator/semiconductor (graphene/hBN/n-AlGaN) deep-UV photodetector with high performance. The wide-band gap AlGaN semiconductor enables the detection of deep-UV signals without the requirement of a UV-pass filter and thus acts as a true solar-blind photodetector. In addition, the several nanolayered graphene–hBN heterostructure is utilized to enhance the performance of photodetectors, which successfully solves the strain issue between graphene and the conventional bulk insulators. Besides, the high transparency of graphene can enable incident light to directly excite the active layer with negligible optical loss, and the two-dimensional hBN insulator is beneficial to reduce dark current and assist the quantum tunneling of photogenerated carriers. Interestingly, the photodetectors demonstrated in this work show the highest responsivity and detectivity compared with previously reported AlGaN-based deep-UV photodetectors.

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“…3.2.1 Solid Cu catalyst. In general, the precursors of growing h-BN range from gas to liquid to solid, such as diborane, 72 ammonia, borazine, 73,74 ammonia borane and others. Among them, solid ammonia borane was the most popular precursor in most cases.…”

Section: Hexagonal Boron Nitridementioning

confidence: 99%

Continuous orientated growth of scaled single-crystal 2D monolayer films

Han

Jiao

et al. 2021

Nanoscale Adv.

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Seven‐inch large‐size synthesis of monolayer hexagonal BN film by low‐pressure CVD

Cited by 15 publications

References 18 publications

Cu Nanowires Passivated with Hexagonal Boron Nitride: An Ultrastable, Selectively Transparent Conductor

Cu Nanowires Passivated with Hexagonal Boron Nitride: An Ultrastable, Selectively Transparent Conductor

Nanolayered Graphene/Hexagonal Boron Nitride/n-AlGaN Heterostructures as Solar-Blind Deep-Ultraviolet Photodetectors

Continuous orientated growth of scaled single-crystal 2D monolayer films

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