Several microstrip-based conductor/thin film ferroelectric phase shifter designs using (YBa2Cu3O7-δ,Au)/SrTiO3/LaAlO3 structures

VanKeuls, F. W.; Romanofsky, Robert R.; Miranda, Félix A.

doi:10.1080/10584589808208057

Cited by 8 publications

(5 citation statements)

References 7 publications

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“…Taking into account these observations, we should enhance our results by simulating a novel phase shifter mask, using our extracted dielectric parameters. Indeed, while increasing the phase shift, the figure of merit is also enhanced, as shown in [11], for instance: for a phase shift of 0.97 • /GHz/mm with 12 dB of losses, the associated figure of merit is 30 • /dB. Concerning dielectric characteristics of the STO films, we obtained low dielectric permittivity values and high loss tangent values as compared to published results, which spread within a very large range of values in other respects.…”

Section: Comparison With Literature Resultsmentioning

confidence: 86%

“…Furthermore, we notice that several results [11,13] were obtained using HTSC YBCO/FE heterostructures: insertion losses tend to be reduced as compared to devices realized on Au films. Besides, our work and results from [13] correspond to measurements performed with standard CPW lines while results from [11,14] correspond to phase shifters designed to increase the phase shift. Taking into account these observations, we should enhance our results by simulating a novel phase shifter mask, using our extracted dielectric parameters.…”

Section: Comparison With Literature Resultsmentioning

confidence: 90%

“…As we did not observe any influence of the STO film thickness on the figure of merit, complementary characterizations should be performed on thicker films to check the influence of this parameter. Indeed, STO thin films deposited by pulsed laser deposition or sputtering have been reported to exhibit larger phase shifts for thicker films but a better figure of merit for thinner films [11].…”

Section: Influence Of the Applied DC Electric Field The Transmissionmentioning

confidence: 99%

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Tunable Coplanar Waveguide Microwave Devices on MOCVD-SrTiO₃Thin Films

et al. 2008

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SrTiO 3 (STO) ferroelectric (FE) thin films associated with high temperature superconductors (HTSC) make a good compromise to realize electronically tunable microwave devices combining controllable dielectric properties of FE films with low loss microwave conductivity in HTSC. Up to now, STO thin films dedicated to this function were deposited by sputtering and pulsed laser deposition. In this study, we have explored the feasibility of tunable microwave devices made from STO thin films prepared by metalorganic chemical vapour deposition. We have characterized Au/STO/MgO coplanar waveguide structures to demonstrate tunability from 500 MHz to 35 GHz, in the 300 K to 60 K temperature range.

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Section: Comparison With Literature Resultsmentioning

confidence: 86%

Section: Comparison With Literature Resultsmentioning

confidence: 90%

Section: Influence Of the Applied DC Electric Field The Transmissionmentioning

confidence: 99%

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Tunable Coplanar Waveguide Microwave Devices on MOCVD-SrTiO₃Thin Films

et al. 2008

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“…The resulting passband, remaining within 3 dB of its initial insertion loss at all voltages, is fairly narrow, about 10% of the operating frequency. Details and discussion of cmps devices have been given in previous publications [7][8][9].…”

Section: Methodsmentioning

confidence: 99%

“…These advantages make them an attractive candidate for microwave applications. Over the past decade, many proof-of-concept demonstrations have been made [1][2][3][4][5][6][7]. For phase shifters, figures of merit up to 120 • /dB of phase shift per insertion loss have been shown for continuous 360 • tuning [5].…”

Section: Introductionmentioning

confidence: 99%

A LARGE SCALE PRODUCTION TEST OF THIN FILM Ba_xSr_1−xTiO₃MICROWAVE PHASE SHIFTERS FABRICATED ON LaAlO₃SUBSTRATES

Keuls

Varaljay

Mueller³

et al. 2005

Integrated Ferroelectrics

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Many individual tunable ferroelectric-based microwave components have demonstrated excellent performance. However data on the production of many identical devices has been lacking. This paper will present data from NASA Glenn Research Center's fabrication of 822 phase shifters using commercially obtained pulsed laser deposited Ba x Sr 1−x TiO 3 (BST) thin films. These phase shifters of identical design were fabricated on 31 BST-coated LaAlO 3 wafers. Issues of phase shifter performance, repeatability, yield, and long term stability will be addressed. Phase shifter tunability and insertion losses will be compared with BST microstructural film characteristics and also with manufacturing induced physical variations in the electrodes.

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Tunable Dielectric Materials and Devices for Broadband Wireless Communications

Mueller

Miranda

Dayton³

2000

Handbook of Thin Film Devices

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Wireless and satellite communications are a rapidly growing industries which are slated for explosive growth into emerging countries as well as countries with advanced economies.The dominant trend in wireless communication systems is towards broadband applications such as multimedia file transfer, video transmission and Internet access. These applications require much higher data transmission rates than those currently used for voice transmission applications. To achieve these higher data rates, substantially larger bandwidths and higher carrier frequencies are required. A key roadblock to implementing these systems at K-band (18-26.5 GHz) and is the need to develop hardware which meets the requirements for high data rate transmission in a cost effective manner. In this chapter, we report on the status of tunable dielectric thin films for devices, such as resonators, filters, phased array antennas, and tunable oscillators, which utilize nonlinear tuning in the control elements. Paraelectric materials such as Barium StrontiumTitanate ((Ba, Sr)TiO 3) have dielectric constants which can be tuned by varying the magnitude of the electric field across the material. Therefore, these materials can be used to control the frequency and/or phase response of various devices such as electronically steerable phased array antennas, oscillators, and filters. Currently, tunable dielectric devices are being developed for applications which require high tunability, low loss, and good RF power-handling capabilities at microwave and millimeter-wave frequencies. These properties are strongly impacted by film microstructure and device design, and considerable developmental work is still required. However, in the last several years enormous progress has occurred in this field, validating the

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Several microstrip-based conductor/thin film ferroelectric phase shifter designs using (YBa₂Cu₃O_7-δ,Au)/SrTiO₃/LaAlO₃ structures

Cited by 8 publications

References 7 publications

Tunable Coplanar Waveguide Microwave Devices on MOCVD-SrTiO₃Thin Films

Tunable Coplanar Waveguide Microwave Devices on MOCVD-SrTiO₃Thin Films

A LARGE SCALE PRODUCTION TEST OF THIN FILM Ba_xSr_1−xTiO₃MICROWAVE PHASE SHIFTERS FABRICATED ON LaAlO₃SUBSTRATES

Tunable Dielectric Materials and Devices for Broadband Wireless Communications

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Several microstrip-based conductor/thin film ferroelectric phase shifter designs using (YBa2Cu3O7-δ,Au)/SrTiO3/LaAlO3 structures

Cited by 8 publications

References 7 publications

Tunable Coplanar Waveguide Microwave Devices on MOCVD-SrTiO3Thin Films

Tunable Coplanar Waveguide Microwave Devices on MOCVD-SrTiO3Thin Films

A LARGE SCALE PRODUCTION TEST OF THIN FILM BaxSr1−xTiO3MICROWAVE PHASE SHIFTERS FABRICATED ON LaAlO3SUBSTRATES

Tunable Dielectric Materials and Devices for Broadband Wireless Communications

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Several microstrip-based conductor/thin film ferroelectric phase shifter designs using (YBa₂Cu₃O_7-δ,Au)/SrTiO₃/LaAlO₃ structures

Tunable Coplanar Waveguide Microwave Devices on MOCVD-SrTiO₃Thin Films

Tunable Coplanar Waveguide Microwave Devices on MOCVD-SrTiO₃Thin Films

A LARGE SCALE PRODUCTION TEST OF THIN FILM Ba_xSr_1−xTiO₃MICROWAVE PHASE SHIFTERS FABRICATED ON LaAlO₃SUBSTRATES