Shadow-Mask Evaporation through Monolayer-Modified Nanostencils

Kölbel, Marius; Tjerkstra, R.W.; Brugger, Jürgen; Rijn, C.J.M. van; Nijdam, W.; Huskens, Jurriaan; Reinhoudt, David N.

doi:10.1021/nl025784o

Cited by 59 publications

(40 citation statements)

References 3 publications

(8 reference statements)

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“…16 A thinner membrane is needed to obtain a narrower bridge, which reduces the mechanical strength of the membrane. In the reverse process, it is not necessary to use a thinner membrane for a narrower bridge pattern because the deposition occurs through two relatively large holes composing a stencil bridge.…”

Section: Resultsmentioning

confidence: 99%

Reverse transfer of nanostencil patterns using intermediate sacrificial layer and lift-off process

Park

Vazquez-Mena

Boogaart

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We propose a new process by which patterns produced by nanostencil lithography can be reversed, so that the final pattern on the substrate has the same contrast ͑filled or empty͒ as that of the stencil. In this process, the stencil pattern is first formed on an intermediate sacrificial layer, and then transferred onto the underlying substrate in a reverse manner. Using this process, we can form various pattern structures that cannot be produced by the normal stencil process, such as an array of pores or multiple parallel bridges. Because a bridge in the stencil is transferred also as a bridge on the substrate, we can not only avoid the widening of a narrow bridge pattern by the stress-induced bending of the membrane, but also reduce the width of the bridge even further using the pattern blurring. Using SiO 2 as an intermediate layer, we have fabricated various reversed Cr patterns on Si, including an array of 800 nm circular pores and a 100-nm-wide and 150-nm-long nanobridge.

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Section: Resultsmentioning

confidence: 99%

Reverse transfer of nanostencil patterns using intermediate sacrificial layer and lift-off process

Park

Vazquez-Mena

Boogaart

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The consequences of this for the resulting patterns for such large evaporation amounts will be described elsewhere. [14] Nevertheless, these results clearly show that cleaning is necessary after evaporating such amounts before re-use of the same nanostencils. The nanostencils could be cleaned easily by immersion in I 2 /KI gold etch solution (0.2 g I 2 , 3.15 g KI in 50 mL H 2 O) for~10±20 min at room temperature.…”

Section: Full Papermentioning

confidence: 92%

“…Therefore we carried out some initial experiments on the formation of organic monolayers on Si x N y and studied their physical and chemical properties. [4] Silicon nitride has a thin native SiO 2 coating layer, and its surface can be activated by treatment with piranha solution (H 2 SO 4 /30 % H 2 O 2 (aq), 3:1).…”

Section: Sams On Silicon Nitridementioning

confidence: 99%

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Self‐Assembled Monolayer Coatings on Nanostencils for the Reduction of Materials Adhesion

Kölbel

Tjerkstra

Kim

et al. 2003

Adv Funct Materials

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Nanostencils (shadow masks with submicrometer apertures in a thin silicon nitride membrane) are promising tools for the facile one‐step generation of nanopatterns of various materials by physical vapor deposition. Evaporation through a shadow mask is accompanied by gradual clogging of the apertures due to adhesion of evaporated material. In order to reduce this effect, nanostencils were coated with alkyl and perfluoroalkyl self‐assembled monolayers (SAMs). The formation and properties of SAMs on planar silicon nitride substrates were studied by contact angle goniometry, X‐ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The SAMs are stable under evaporation of gold at various angles. SAM‐coated nanostencils showed considerably less adhesion of gold compared to bare SixNy stencils.

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“…During the deposition, the material covers the membrane as well as the target surface making it necessary to clean the membrane after certain times of usage. The gradual clogging of the aperture in the membrane accompanying the evaporation can be reduced by coating a self-assembled monolayer on the membrane surface [12].…”

Section: Rapid and Simultaneous Micro-and Nanoscale Patterningmentioning

confidence: 99%

Fabrication and application of a full wafer size micro/nanostencil for multiple length-scale surface patterning

Kim

Boogaart

Brugger

2003

Microelectronic Engineering

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A tool and method for flexible and rapid surface patterning technique beyond lithography based on high-resolution shadow mask method, or nanostencil, is presented. This new type of miniaturized shadow mask is fabricated by a combination of MEMS processes and focused ion beam (FIB) milling. Thereby apertures in a 100-500 nm thick low-stress silicon nitride membrane in the size range from , 100 nm to . 100 mm were made. The stencil device is mechanically fixed on the surface and used as miniature shadow mask during deposition of metal layers. Using this method, aluminum micro-and nanostructures as small as 100 nm in width were patterned. The deposited micro-and nano-scale structures were used as etch mask and transferred into a sub-layer (in our case silicon nitride) by dry plasma etching. High-resolution shadow masking can be used to create micro / nanoscale patterns on arbitrary substrates including mechanically fragile or chemically active surfaces. 

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Shadow-Mask Evaporation through Monolayer-Modified Nanostencils

Cited by 59 publications

References 3 publications

Reverse transfer of nanostencil patterns using intermediate sacrificial layer and lift-off process

Reverse transfer of nanostencil patterns using intermediate sacrificial layer and lift-off process

Self‐Assembled Monolayer Coatings on Nanostencils for the Reduction of Materials Adhesion

Fabrication and application of a full wafer size micro/nanostencil for multiple length-scale surface patterning

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