Shallow levels in the band gap of CdTe films deposited on metallic substrates

Optical properties of swift ion beam irradiated CdTe thin films

“…The excitonic emission is severely attenuated with the appearance of DAP emission, which is a signature of presence of high density of native defects in the as grown CdTe films. We have observed a weak band around 1.55 eV, which most probably related to cadmium vacancies (V Cd ) and could be associated with the transition from conduction band to V Cd acceptor level [25,26]. This is in good agreement with the results obtained from EDS analysis.…”

Photoelectric and photoluminescence properties of CdTe–GaTe composite

“…As was demonstrated in Ref. , Te vacancies induce in the CdTe bandgap a donor level located at 0.04 eV below the conduction band, while Cd defects engender acceptor levels situated at 0.115 eV above the valence band. Taking into account that the bandgap of CdTe, at 80 K, is equal to 1.605 ± 0.002 eV, then the PL band with the maximum at 1.450 eV can be considered as an electronic transition between the donor level ( V Te ) and acceptor level (Cd Te defect).…”

Three Dimensionally Structured CdTe Thin-Film Photovoltaic Devices with Self-Aligned Back-Contacts: Electrodeposition on Interdigitated Electrodes

“…The low values are not surprising as electrodeposited CdTe is typically annealed, often in the presence of compounds such as CdCl 2 , to improve its properties. 23,29,30 The maximum values of efficiencies for the specimens are not significant as there was a substantial variation in the maximum values for intermediate pitch specimens as a function of position on the device. Some of the lower efficiency specimens exhibited swirl-like inhomogeneities on their surfaces, possibly associated with contamination introduced by the electroplating tape, that were visible to the unaided eye.…”