Shallow ohmic contact to both <i>n</i>- and <i>p</i>-GaAs

Han, W. Y.; Lu, Yicheng; Lee, H. S.; Cole, M. W.; Casas, L. M.; DeAnni, A.; Jones, Kenneth A.; Yang, Ling

doi:10.1063/1.355248

Cited by 37 publications

(8 citation statements)

References 13 publications

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“…The growth, processing issues, and electronic properties of GaN based devices are important concerns which have been intensely addressed in the recent literature. 7 In this letter we report results which demonstrate that the crystal quality of the GaN epilayers is actually a major factor motivating this metal-semiconductor interfacial optimization with its subsequent enhanced device reliability. One of the fundamental issues, needed to promote practical applications of GaN based devices, is the material crystal quality of the GaN.…”

mentioning

confidence: 92%

Post growth rapid thermal annealing of GaN: The relationship between annealing temperature, GaN crystal quality, and contact-GaN interfacial structure

Cole

Ren²,

Pearton

1997

Applied Physics Letters

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Microstructure of GaN films grown by metalorganic chemical-vapor-deposition (MOCVD) on c-sapphire substrates has been accessed as a function of post-growth rapid thermal annealing (RTA) temperatures from 600 °C to 800 °C. The influence of the thermally modified, near-surface crystalline quality on sputtered WSi contact to GaN was also evaluated. Similar planar defects were observed in all heat treated samples; only their density differed. Our analyses demonstrated a strong relationship between the improved GaN crystal quality and postgrowth high-temperature thermal processing. The density of the near-surface defects was lowered by 61% as the annealing temperature was raised from 600 °C to 800 °C. Depression of the near-surface defects encouraged development of the β-W2N interfacial phase and promoted metal-semiconductor interface smoothness.

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mentioning

confidence: 92%

Post growth rapid thermal annealing of GaN: The relationship between annealing temperature, GaN crystal quality, and contact-GaN interfacial structure

Cole

Ren²,

Pearton

1997

Applied Physics Letters

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“…13 It must be kept in mind that the interfacial properties of the metal-semiconductor contact strongly influence electrical performance. 4,5 Thus, the fact that the metal-semiconductor interfacial region remained compositionally and electrically unchanged lends support to the excellent reliability of this contact in response to acute pulsed thermal stress.…”

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confidence: 80%

“…4,5 Since ohmic contacts are a fundamental component of all pulsed power devices, the ohmic contact-SiC device structure was selected for cyclic thermal testing. A number of different metals have been proposed as suitable ohmic contacts to n-SiC.…”

mentioning

confidence: 99%

The Reliability of Ni Contacts to n-SiC Subjected to Pulsed Thermal Fatigue

Cole

Hubbard

Fountzoulas

et al. 1999

Electrochem. Solid-State Lett.

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Laboratory experiments which mimic the acute cyclic thermal loading characteristic of pulsed power device switching operation have been developed. Ni contacts to n-SiC were the device components selected for cyclic thermal testing. Modifications of the contactSiC materials properties in response to cyclic thermal fatigue were quantitatively assessed via Rutherford backscattering spectrometry, nanoindentation testing, and current-voltage measurements. Decreases in nanohardness and elastic modulus were observed in response to thermal fatigue. No compositional modifications were observed at the metal-semiconductor interface. Our results demonstrated that the majority of the material changes were initiated after the first thermal pulse and that the effects of subsequent thermal cycling (up to 10 pulses) were negligible. The stability of the metal-semiconductor interface after exposure to repeated pulsed thermal cycling lends support for the utilization of Ni as a contact metallization for pulsed power switching applications.Much attention has focused on SiC as a material for high power, high temperature, and high radiation tolerance device applications. 1-3 It is the exceptional properties of SiC such as high breakdown field, large bandgap, high thermal conductivity, and high electron saturation velocity, which are responsible for these device application interests. 1 To date, SiC semiconductor materials research efforts have focused predominantly on growth, processing science, and packaging issues. However, in order to promote, design, and realize reliable SiC power devices, it is important to assess the performance of device components under the influence of their potential operational stress regimes. This is particularly critical for pulsed power device applications, namely, palpitated high power switching, in which the operational environment is dominated by acute cyclic pulsed power actions which ultimately translate into severe thermal, electrical, and mechanical cyclic stresses in the device materials. In order to fully explore SiC utilization for pulsed power switching applications, it is necessary to determine the effects of such cyclic stress regimes, both individually and as combined effects, on the fundamental pulsed power device components.In this paper, we report results of a unidimensional, that is, noncombined effects, investigation which evaluated the reliability of NiSiC ohmic contact device components in response to acute cyclic thermal loading. Our results demonstrate that the electrical, compositional, and structural integrity of the metal-SiC interface strongly influences the reliability of the Ni-SiC ohmic contacts under acute cyclic thermal stress.It is well documented that device performance is often limited by the electrical and materials integrity of the ohmic contacts. 4,5 Since ohmic contacts are a fundamental component of all pulsed power devices, the ohmic contact-SiC device structure was selected for cyclic thermal testing. A number of different metals have been proposed as suitable oh...

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“…Recent progress in both the growth and processing science arenas of this material has helped to develop these technologies. However, it is widely appreciated that the overall performance of electronic devices is related to the integrity of the metal contacts (Han et al 1993). Therefore, in order to obtain and maintain optimum performance, GaN devices must have high-quality ohmic contacts.…”

Section: Introductionmentioning

confidence: 99%

The structure and thermal stability of tungsten‐based contact metallizations to n‐GaN

1998

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Summary:Thermally stable contacts to n-GaN have been obtained using W and WSi. Low specific contact resistance was achieved for the W metallization with limited reaction between the metal and semiconductor up to 1000˚C. The formation of the β-W 2 N and W-N interfacial phases were deemed responsible for the electrical integrity observed at these annealing temperatures. The W x -N 1−x interfacial phases functioned as efficient barriers to the outdiffusion of Ga. For WSi, the β-W 2 N interfacial phase formation was observed after annealing at 700˚ and 800˚C. This phase also prevented Ga outdiffusion at these elevated temperatures. Optimization of this phase and moderate suppression of interfacial irregularities occurred after annealing at 800˚C. This investigation demonstrates that both W and WSi contacts appear to be reasonable contact choices for high-temperature electronics applications.

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Shallow ohmic contact to both n- and p-GaAs

Cited by 37 publications

References 13 publications

Post growth rapid thermal annealing of GaN: The relationship between annealing temperature, GaN crystal quality, and contact-GaN interfacial structure

Post growth rapid thermal annealing of GaN: The relationship between annealing temperature, GaN crystal quality, and contact-GaN interfacial structure

The Reliability of Ni Contacts to n-SiC Subjected to Pulsed Thermal Fatigue

The structure and thermal stability of tungsten‐based contact metallizations to n‐GaN

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