Shallow Silicon Vacancy Centers with Lifetime-Limited Optical Linewidths in Diamond Nanostructures

Zuber, Josh A.; Li, Minghao; Grimau Puigibert, Marcel.li; Happacher, Jodok; Reiser, Patrick; Shields, Brendan J.; Maletinsky, Patrick

doi:10.1021/acs.nanolett.3c03145

Cited by 8 publications

(2 citation statements)

References 44 publications

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“…While NV centers are key to the present findings, most ideas can be extended to other color centers in diamond or alternative material hosts: Examples include the silicon vacancy and carbon–silicon divacancy in SiC, group-IV vacancy color centers in diamond, − emitters in 2D materials, and rare earth ions in garnets. One can envision methodological extensions in the form of protocols adapted to investigating the trap response under optical excitation not affecting the NV charge state or, alternatively, tailored to probing the diffusion of electrons injected from proximal NVs. , Establishing correlations in the fluctuations of optical resonances could prove valuable on its own, e.g., to improve spectral resolution or to characterize new types of emitters. , On the other hand, the ability to locate proximal traps hinges on Hamiltonians quantitatively capturing the impact of electric fields on optical resonances, presently available only for select color centers. ,, …”

Section: Discussion and Outlookmentioning

confidence: 99%

Correlated Spectroscopy of Electric Noise with Color Center Clusters

Delord,

Monge,

Meriles

2024

Nano Lett.

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Experimental noise often contains information about the interactions of a system with its environment, but establishing a relation between the measured time fluctuations and the underlying physical observables is rarely apparent. Here, we leverage a multidimensional and multisensor analysis of spectral diffusion to investigate the dynamics of trapped carriers near subdiffraction clusters of nitrogen-vacancy (NV) centers in diamond. We establish statistical correlations in the spectral fluctuations we measure as we recursively probe the cluster optical resonances, which we then exploit to reveal proximal traps. Further, we deterministically induce Stark shifts in the cluster spectrum, ultimately allowing us to pinpoint the relative three-dimensional positions of interacting NVs as well as the location and charge sign of surrounding traps. Our results can be generalized to other color centers and provide opportunities for the characterization of photocarrier dynamics in semiconductors and the manipulation of nanoscale spin-qubit clusters connected via electric fields.

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Section: Discussion and Outlookmentioning

confidence: 99%

Correlated Spectroscopy of Electric Noise with Color Center Clusters

Delord,

Monge,

Meriles

2024

Nano Lett.

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“…Imprecision and depth straggle of the ion implantation process used to embed SiVs can result in suboptimal coupling (E(⃗ r) ≪ E max ), which reduces the observed coupling. Other methods of vacancy-center placement including delta doping [25], in-situ annealing [26], manual placement of nanoparticles [27], and masked implantation [14] have similar limitations in precision. Figure 4(a) plots the coupling strength g against mode volume, given different implantation accuracies for an implantation region of diameter D (excluding non-dielectric hole regions) in bowtie photonic crystal cavities with triangular cross-sections, and in an elliptical hole-based photonic crystal cavity [21] with a triangular cross-section.…”

Section: Design Of Low Mode Volume Cavitiesmentioning

confidence: 99%

Limitations in design and applications of ultra-small mode volume photonic crystals

Emran,

Chalupnik,

Knall

et al. 2024

New J. Phys.

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Ultra-small mode volume nanophotonic crystal cavities have been proposed as powerful tools for increasing coupling rates in cavity quantum electrodynamics systems. However, their adoption in quantum information applications remains elusive. In this work, we investigate possible reasons why, and analyze the impact of different low mode volume resonator design choices on their utility in quantum optics experiments. We analyze band structure features and loss rates of low mode volume bowtie cavities in diamond and demonstrate independent design control over cavity-emitter coupling strength and loss rates. Further, using silicon vacancy centers in diamond as exemplary emitters, we investigate the influence of placement imprecision. We find that the benefit on photon collection efficiency and indistinguishability is limited, while the fabrication complexity of ultra-small cavity designs increases substantially compared to conventional photonic crystals. We conclude that ultra-small mode volume designs are primarily of interest for dispersive spin-photon interactions, which are of great interest for future quantum networks.

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3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device

Wood,

McCloskey,

Dontschuk

et al. 2024

Advanced Materials

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Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide‐bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically‐active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin‐electric field coupling to measure electronic phenomena. In this work, charge‐state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen‐vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on‐demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide‐bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide‐bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.

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Shallow Silicon Vacancy Centers with Lifetime-Limited Optical Linewidths in Diamond Nanostructures

Cited by 8 publications

References 44 publications

Correlated Spectroscopy of Electric Noise with Color Center Clusters

Correlated Spectroscopy of Electric Noise with Color Center Clusters

Limitations in design and applications of ultra-small mode volume photonic crystals

3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device

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