Shape and growth of InAs quantum dots on GaAs(113)A

Abstract

The shape of InAs quantum dots (QDs), grown by molecular-beam epitaxy on the GaAs(113)A surface, is studied by in situ scanning tunneling microscopy. At an early growth stage, the QDs adopt a shape given by {110}, (111)A, and {2 5 11}A bounding facets and an unresolved rounded {001} region. At a later growth stage, the QDs become elongated along [33 (2) over bar], with a reduction of the (111)A facet size and a flattening of the rounded region. This is explained by facet growth kinetics. The broad size distribution indicates growth limitation. The symmetry of the substrate is retained in the QDs, proving epitaxial growth

Electronic and optical properties of [N11] grown nanostructures

“…The wetting layer thickness is 1 nm, and the dot height is 4 nm. Note that more complex but still pyramidal shapes were reported by Y. Temko et al for InAs/GaAs dots grown by molecular-beam epitaxy [18].…”

Photoluminescence mapping on InAs/InGaAs quantum dot structures

“…The inhomogeneity of individual QD parameters across the wafer leads to broadening of the emission spectra resulted in loss of emission efficiency. This type of problems in QD structures were studded using scanning PL performed with sub-micron resolution [3], high -resolution transmission electron microscopy [4] and scanning tunneling microscopy [5].…”

InAs Quantum Dots in Symmetric InGaAs/GaAs Quantum Wells

“…This type of problems in QD structures was investigated using scanning PL spectroscopy [23,[26][27][28][29], high resolution transmission electron microscopy [30], scanning tunneling microscopy [31], as well as spatially resolved scanning tunneling luminescence [32]. However, in dot-in-a well structures, where the InAs QDs coupled with InGaAs/GaAs QWs, the physical reasons of emission inhomogeneity still have to be discussed.…”