Shape Control in Epitaxial Electrodeposition:  Cu<sub>2</sub>O Nanocubes on InP(001)

Liu, Run; Oba, Fumiyasu; Bohannan, Eric W.; Ernst, F.; Switzer, Jay A.

doi:10.1021/cm034807c

Cited by 126 publications

(96 citation statements)

References 33 publications

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“…Many methods have been reported to synthesize Cu 2 O nanoparticles Muramatsu & Sugimoto, 1997;X. Liu et al, 2007), nanocubes (Gou & Murphy, 2003;R. Liu et al, 2003), octahedral nanocages (Lu et al, 2005), nanorods (Cheng et al, 2011), and nanowires (Wang et al, 2002).…”

Section: Cuprous Oxide (Cu 2 O) Nanoparticlesmentioning

confidence: 99%

Potential-pH Diagrams for Oxidation-State Control of Nanoparticles Synthesized via Chemical Reduction

Yagi¹

2011

Thermodynamics - Physical Chemistry of Aqueous Systems

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Section: Cuprous Oxide (Cu 2 O) Nanoparticlesmentioning

confidence: 99%

Potential-pH Diagrams for Oxidation-State Control of Nanoparticles Synthesized via Chemical Reduction

Yagi¹

2011

Thermodynamics - Physical Chemistry of Aqueous Systems

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“…[28] Meanwhile, various approaches have been reported for fabricating Cu 2 O nanocrystals with varied morphologies, such as wires, [29] cubes, [30,31] pyramids, [31] and octahedra. [32] In particular, monodisperse Cu 2 O nanocubes ranging in edge length from 200 to 450 nm have been synthesized in an aqueous cetyltrimethylammonium bromide solution.…”

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confidence: 99%

One‐Pot Synthesis of Octahedral Cu₂O Nanocages via a Catalytic Solution Route

et al. 2005

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lithography process, using the increase in the T g of the photoresist particles caused by UV-induced crosslinking. Subsequent deposition of silica through the patterned-colloidal mask yielded ordered domains of nanoscale-hole arrays on a micrometer length scale. The present technique produces a spatially organized mask with multiple length scales for colloidal lithography. As such, various functional materials can be deposited through these multiscale colloidal masks, fabricating nanopatterned substrates, which are of practical significance in a wide range of applications from biosensors to optoelectronic devices. ExperimentalSynthesis of Photoresist Particles: MMA (Aldrich, > 99 %) and GMA (Aldrich, > 95 %) were used as supplied. Potassium persulfate (KPS) was used as an initiator for emulsion polymerization. A 100 mL two-necked round-bottom flask was filled with KPS dissolved in 50 mL of distilled water, and a monomer mixture of MMA and GMA. The content of KPS was fixed at 1 wt.-%. The content of GMA was varied in the range 5-30 wt.-% of the total monomer content, which was fixed at 10 wt.-%. The system was kept under a nitrogen atmosphere and the reaction mixture was stirred magnetically at 300 rpm. When the KPS was dissolved completely, the mixture was heated to 75°C using an oil bath. After 12 h, the mixture was separated by centrifugation and was purified with distilled water several times. The size of the particles, measured by SEM, ranged from 360 to 420 nm. Later, the cationic photoinitiator, Irgacure 250, was introduced to the photoresist particles by spin-coating.Measurement of T g : The glass-transition temperatures of the UV-exposed and UV-screened poly(MMA-co-GMA) particles were determined using a differential scanning calorimeter (DSC, TA Instruments, Q1000) under a nitrogen atmosphere at a heating rate of 10°C min -1 . To measure the T g of UV-exposed particles, the particles were fully baked at 150°C for 2 h after UV exposure, because the crosslinking reaction could proceed during the DSC measurement. Therefore, the measured T g could be higher than the T g of the UV-exposed particles in the patterning. Meanwhile, T g of the UV-screened particles was compared with that estimated using the rule-of-mixtures theory where T g = 115°C for polyMMA and T g = 75°C for polyGMA [19].Deposition of Silica: Silica was deposited in a batch reactor under atmospheric pressure at room temperature. The sample was sequentially exposed to water vapor for 30 min, dried in argon gas for purging the reactor, and then SiCl 4 vapor for 20 min. The reactant vapors were carried by argon gas under atmospheric pressure. The concentration of SiCl 4 was 0.05 vol.-% in moisture-free argon gas and the relative humidity of water vapor was 50 %. (Caution: silicon tetrachloride is a very corrosive liquid. Use it only with adequate ventilation, and wear protective clothing and safety goggles.) The thickness of the silica layer was controlled by the exposure time to the precursor vapor and around 50 nm for 30 min exposure was obtained.

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“…In this process, the electrochemically produced species reacts with water or hydroxide ions to form a metal oxide on the electrode. [41][42][43][44][45][46][47][48][49][50][51][52][53][54][55][56][57] A second method to produce thin films is to electrochemically change the pH of the electrolyte at the electrode surface. Because the solubility of any material is dependent on pH, the pH can be electrochemically changed at the electrode surface, thus lowering the solubility of the material and resulting in the precipitation of the material only on the electrode surface.…”

Section: Electrodeposition Of Chiral Filmsmentioning

confidence: 99%

“…[40] For example, Switzer group has previously shown that varying the applied potential and pH changes the orientation and size of the electrodeposited Cu2O films. [59,60] Films follow the orientation of the substrate at low overpotentials and change to a kinetically controlled orientation at a critical thickness. As the overpotential increases, the critical thickness for the transition decreases.…”

Section: Electrodeposition Of Chiral Filmsmentioning

confidence: 99%