Langmuir probe measurements on CHFs, CFt, CF4-H~, and CF4-O2 plasmas with concurrent etch rate measurements on SiO2 and Si have been made in a reactive sputter etching system= At an rf power of 300W and a pressure of 15 mTorr, the ion density is typically 1.5 • 101~ cm -~, the electron temperature 2 eV, the plasma potential 30 eV, and the ion energy (i.e., the sheath potential) of the order of 500 eV. The dependence of these parameters on rf power, pressure, reactor geometry, and plasma gas composition is investigated, as well as the spatial uniformity of the plasma. For SiO~, etch rates vary essentially in proportion to ion densities with all the different plasmas. For Si in CF4-O2 plasmas, the anisotropic part of the etch rate also parallels the ion density. From the measured ion densities the ion flux to the substrate is estimated. Thus, etch rates per ion can be determined, which turn out to be similar to those in reactive ion beam etching, although in reactive sputter etching ion energies are much smaller.ABSTRACT A laser interferometer system to monitor plasma etch rate, and to control etched depth of isolation areas in silicon for oxide isolated bipolar devices, is reported. The etching process is stopped as soon as the desired etched depth is achieved. The accuracy of the system is 4-6%, depending on the masking material. It is found that this method of laser interferometry can be particularly useful in process development for observations in real time of changes in etch rate.Laser interferometers have been used in integrated circuit processing to monitor the etch rates of dielec-* Electrochemical Society Active Member.