Shape of InAs quantum dots grown on the GaAs (1̄ 1̄ 3̄) B surface

Abstract

Self-organized InAs quantum dots were grown by molecular-beam epitaxy on the GaAs (1̄1̄3̄) B surface. Atomically-resolved scanning tunneling microscopy images were acquired in situ. Each quantum dot grows with the same orientation relative to the substrate, with mirror symmetry to the (1̄10) plane perpendicular to the surface, and with its central part sitting on a flat base. The shape of the central part is given by {110} and (1̄1̄1̄) B bounding facets and a not-further-resolved round region. High-index surfaces such as (1̄3̄5̄) B, (3̄1̄5̄) B, and probably (1̄1̄2̄) B are derived for the base.

Formation of two-dimensional InAs quantum dot arrays by self-organized anisotropic strain engineering on InP (311)B substrates

“…1(a). The faceting is similar to that observed for InAs QDs on GaAs (3 1 1)B substrates, reflecting the symmetry of the (3 1 1)B surface [12]. In between the large QDs, dense small QDs with a more round shape having diameters and heights of 48.4874.64 and 8.43 71.55 nm, respectively, are found.…”

Multiline photoluminescence of single InGaAs quantum dots

“…It should be noted here that most previous investigations were performed on MBEgrown dots [6,10,12,[15][16][17], on much larger lithographically defined dots [11], or on dots grown on an AlGaAs substrate [10,13]. Even dots grown on the differently orientated (113)B surface were studied [13], where the dot shape is known to be different [25]. Therefore the present InGaAs quantum dots with a strongly different structure, reflected by the about 300 meV lower ground-state transition energy, are expected to show a completely different interaction strength of the carriers in the dot.…”

InAs quantum dots grown on theGaAs(113)AandGaAs(1¯1¯3¯)Temko1, Suzuki2, Kratzer3 et al. 2003Phys. Rev. BSelf Cite310170View full textAdd to dashboardCite

“…5,10 Furthermore, the substrate orientation may induce certain bonding facets on the QD's and therefore determine their shape. [11][12][13][14][15][16] It is therefore interesting to compare the formation and development of InAs QD's on substrates of different orientation.…”

“…Generally, one defines the A and B faces as follows: A surface in the vicinity of ͑111͒A is an A face, and a surface in the vicinity of (1 1 1 )B is a B face. Although we have already reported on the atomically resolved shape of these QD's, 14,15 we find it important to compare the growth on the two substrates in greater detail and to illuminate the role of the wetting layer. First, we show that the atomic arrangement is not the same on the bare GaAs͕113͖ surfaces and on the subsequently grown InAs wetting layers.…”