Sharp growth of nickel plasticity under impact load near Curie point

Abstract

We proposed an explanation of the recent observations by Zaretsky [Appl. Phys. Lett. 92, 011913 (2008)] who discovered sharp increase in nickel plasticity under impact loading near Curie temperature TC. Growth of plasticity is explained by reduction in dynamical deceleration of dislocations controlled by their interaction with paramagnetic obstacles. The decreased contribution of these obstacles is due to spin-dependent transitions in internal magnetic field of ferromagnetic in radical pair dislocation-obstacle from strong to weak bonding states. The main contribution to the effect is from fields of magnetic fluctuations which have a large growth near Curie point.

High resolution imaging of few-layer graphene

“…7,12 Secondly, the development and optimization of high throughput and non-destructive characterization techniques monitoring the relevant physical properties of the graphene layers must be available. In the context of graphene-based nanoscale devices, an investigation of the morphology and an accurate determination of the FLG thickness (number of graphene layers) will be mandatory, and several techniques have been employed to provide this information: AFM, [13][14][15][16] scanning tunneling microscopy (STM), 17 scanning (transmission) electron microscopy (S(T)EM), 18,19 low-energy electron diffraction (LEED), 20 angle-resolved ultraviolet photoemission spectroscopy (ARUPS), 20 Auger electron spectroscopy (AES), 21 Raman spectroscopy, 13,[22][23][24][25][26] and ORM techniques. [27][28][29][30][31][32][33] The scanning probe microscopy techniques (AFM and STM) allow height and morphology investigations with nanometer resolution, the major disadvantages being the low throughput when considering large-area sample examination and the cumbersome interpretation of the images due to influence of tip-sample interaction 14,16 and substrate topology.…”

“…[27][28][29][30][31][32][33] The scanning probe microscopy techniques (AFM and STM) allow height and morphology investigations with nanometer resolution, the major disadvantages being the low throughput when considering large-area sample examination and the cumbersome interpretation of the images due to influence of tip-sample interaction 14,16 and substrate topology. 15,17 The electron probe-based techniques, S(T)EM, LEED, ARUPS, and AES, are also limited in throughput due to their rather complex experimental setup requiring vacuum and challenging quantitative data interpretation. 20,21 The optical techniques based on either elastically (reflected) scattered light or inelastically (Raman) scattered light can be operated at ambient conditions and have the potential of high throughput.…”