Sharp-Line Photoluminescence and Two-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs Structure

Brunner, K.; Abstreiter, G.; Böhm, G.; Tränkle, G.; Weimann, G.

doi:10.1103/physrevlett.73.1138

Cited by 498 publications

(277 citation statements)

References 17 publications

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“…8). Such a doublet structure is similar to that observed in the micro-luminescence of natural GaAs and InAs quantum dots [9][10][11][12][13][14], and can be assigned to neutral (X) and charged excitons and/or biexcitons (XX1). A further increase in the excitation power leads to the appearance of additional low energy lines which we attribute to the formation of more complex excitonic molecules (lines XX2 and XX3).…”

Section: Micro-luminescence Experimentssupporting

confidence: 67%

Emission from Mesoscopic-Size Islands Formed in a GaAs/AlAs Double Layer Structure

et al. 2004

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The nature of sharp emission lines which are present in macro--luminescence experiments on a type-II GaAs/AlAs double quantum well structure is discussed. The experiments, which also include micro-luminescence measurements, allowed us to conclude that the sharp emission lines observed originate from lateral GaAlAs islands of a few µm in diameter. They serve as efficient type-I recombination centers for indirect excitons and/or carriers which diffuse in the GaAs/AlAs QW structure and strongly affect the emission processes observed in macro-luminescence experiments. These traps can easily be filled with electron-hole pairs, giving rise to the formation of neutral excitons as well as more complex excitonic molecules. Magnetoluminescence spectra from single islands resemble those observed for natural quantum dots formed in narrow GaAs quantum wells.

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Section: Micro-luminescence Experimentssupporting

confidence: 67%

Emission from Mesoscopic-Size Islands Formed in a GaAs/AlAs Double Layer Structure

et al. 2004

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“…(5) describes a monochromatic environment, the fluctuations in general are broad band in frequency, as described in Eq. (6). Examples of environments that have been studied experimentally, are the impedance in the leads [28], blackbody radiation [30], and phonons [31].…”

Section: Master Equation For Pat Through a Quantum Dotmentioning

confidence: 99%

“…This problem is circumvented by inelastic light scattering experiments which have been able to detect electronic excitations in arrays of quantum dots that can be related to a discrete single-particle spectrum [5]. Recently, this technique has also probed excitons in a single quantum dot [6]. In this review, we discuss electron transport experiments on single quantum dots, that are irradiated by a microwave signal.…”

Section: Introductionmentioning

confidence: 99%

Photon Assisted Tunneling in Quantum Dots

Wiel

Oosterkamp

Franceschi

et al. 2002

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Abstract. This internal file takes care of list definitions and 'general' point size options. 1.1. Section size commands added command: \little. This is identical to \tiny here. Allowed type provided values: 5/6, 6/7, 7/8, 8/9.5, 9/11, 10/12, 11/13, 12/14, 14/18, 17/22, 20 Textheight and textwidthThese are the main reason for the existence of these files. For some stupid reason, L A T E X calculates textwidth out of \paperwidth. We did want to support letter paper, but our \textwidth is fixed, with the margins being calculated.Presume \textwidth and \marginparwidth are set in the stylefile, or we're in trouble. The 2pc value is used to compensate for the 'dead' corners in most laserprinters.Calculations are done 'AtBeginDocument' to allow changes made in the preamble and later on in the stylefile. Abstract. This internal file takes care of list definitions and 'general' point size options. This is a 'tight' file. 6/7, 7/8, 8/9, 9/10.5, 10/11.5, 11/13, 12/14, 14/18, 17/22, 20

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“…Over the past 10-15 years two classes of quantum dot structures derived from semiconductor heterostructures have been studied extensively by optical techniques: self-assembled quantum dots produced by the Stranski-Krastanow growth; and so-called interface fluctuation quantum dots [1][2][3][4] produced by interrupted growth at the heterointerfaces of narrow quantum wells. In the former case for structures such as In(Ga)As/GaAs [5], the confinement energies in all three spatial directions typically exceed the electron-hole Coulomb correlation energy (exciton binding energy) of photoexcited electrons and holes by at least an order of magnitude.…”

Section: Introduction/backgroundmentioning

confidence: 99%

Internal Transitions of Charged Excitons in AlGaAs/GaAs Lateral Fluctuation Quantum Dots

et al. 2004

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Low temperature measurements of magneto-photoluminescence and optically detected resonance spectroscopy in magnetic fields up to 10 T were carried out on GaAs/Al 0.3 Ga 0.7 As quantum well samples grown by molecular beam epitaxy with lateral fluctuation quantum dots produced by growth interruption. Monolayer fluctuations of the quantum well width form lateral quantum dots for which confinement energies are less than Coulomb correlation energies. Five different width quantum wells (2.8-14.1 nm) were grown in a single sample, doped in the barriers with Si donors to allow for photoluminescence of both excitons and trions. We report studies of the optically detected resonance spectra associated with the ensemble photoluminescence of all of the wells including observation of bound-to-continuum internal transitions of trions, both singlet and triplet, and electron cyclotron resonance for the wider wells, which also show a clear bound-to-bound triplet transition. The latter is forbidden by magnetic translational invariance, but can be seen in these samples because this symmetry is broken by the lateral fluctuations, whose characteristic dimensions are greater than the trion orbit size. The two narrowest wells show strong broad optically detected resonance signals associated with inhomogeneously broadened internal transitions of the strongly correlated trions in the lateral dots. The optically detected resonance signals peak well below the calculated positions of electron cyclotron resonance. As expected for localized carriers and excitons, there is no free electron cyclotron resonance. We also present preliminary measurements of optically detected resonance spectra from a single dot.

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Sharp-Line Photoluminescence and Two-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs Structure

Cited by 498 publications

References 17 publications

Emission from Mesoscopic-Size Islands Formed in a GaAs/AlAs Double Layer Structure

Emission from Mesoscopic-Size Islands Formed in a GaAs/AlAs Double Layer Structure

Photon Assisted Tunneling in Quantum Dots

Internal Transitions of Charged Excitons in AlGaAs/GaAs Lateral Fluctuation Quantum Dots

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