Shedding light on the initial growth of ZnO during plasma-enhanced atomic layer deposition on vapor-deposited polymer thin films

Demelius, Lisanne; Blatnik, Matthias; Unger, Katrin; Parlanti, Paola; Gemmi, Mauro; Coclite, Anna Maria

doi:10.1016/j.apsusc.2022.154619

Cited by 12 publications

(9 citation statements)

References 96 publications

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“…The observed difference (Figure S4 and Table S2 of the Supporting Information) in film morphology and electrical resistivity of the Cu thin film can be attributed to the more chemically polar environment surface of ALD-ZnO than that of ALD-Al 2 O 3 . In contrast, a delayed nucleation is believed to occur on the surface of the polymer during the processes of ALD-Al 2 O 3 , ALD-ZnO, and ALD-W as a result of the lack of functional groups of the polymer and inefficient precursor diffusion. ,, Therefore, we can conclude that the ZnO buffer layer provides adsorption sites for Cu precursors and nucleation sites for the deposition of ALD-Cu.…”

Section: Resultsmentioning

confidence: 86%

“…In contrast, a delayed nucleation is believed to occur on the surface of the polymer during the processes of ALD-Al 2 O 3 , ALD-ZnO, and ALD-W as a result of the lack of functional groups of the polymer and inefficient precursor diffusion. 9,20,22 Therefore, we can conclude that the ZnO buffer layer provides adsorption sites for Cu precursors and nucleation sites for the deposition of ALD-Cu.…”

Section: ■ Results and Discussionmentioning

confidence: 87%

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Improved Electrical Resistivity of Atomic-Layer-Deposited Copper Thin Films on Polyimide Substrates by an In Situ ZnO Interlayer

Gao,

Zhang,

Wang

et al. 2023

ACS Appl. Mater. Interfaces

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The low-temperature atomic layer deposition of metal on polymer surfaces is often challenging owing to the deficiency of functional groups and reactivity. Here, the deposition of ALD-Cu employing Cu(hfac) 2 and Et 2 Zn at a low temperature (120 °C) on polyimide (PI) substrates is improved by the utilization of an in situ ultrathin ALD-ZnO buffer layer. A conformal and continuous ALD-Cu thin film with low resistivity (6.07 μΩ cm) is fabricated on an ALD-ZnO/PI substrate. The findings demonstrate that the ALD-ZnO buffer layer provides chemisorption and a nucleation site for the initial growth of ALD-Cu. Transmission electron microscopy and energy-dispersive X-ray analysis reveal that the ALD-ZnO layer plays a buffer role in the fitness of ALD-Cu on PI substrates and its ability to elicit the formation of an ALD-ZnO nanocluster and polar surface. ALD-ZnO can be effectively utilized as a buffer layer for polymer-based ALD-metal processes, showing potential in flexible electronic applications.

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Section: Resultsmentioning

confidence: 86%

Section: ■ Results and Discussionmentioning

confidence: 87%

Improved Electrical Resistivity of Atomic-Layer-Deposited Copper Thin Films on Polyimide Substrates by an In Situ ZnO Interlayer

Gao,

Zhang,

Wang

et al. 2023

ACS Appl. Mater. Interfaces

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“…Another alternative for the implementation of CVD is through enhancing it with the aid of plasma. During a PECVD process, the reactive species are not created by thermal fragmentation, as occurs in the most conventional CVD techniques, but rather it is accomplished within a plasma phase 89 . In principle, plasma is fed with the reactive gases and precursors and the species responsible for the deposition such as ions, radicals and neutrals are formed through the electronic collisions.…”

Section: Cvd Techniques For the Modification Of Thin Films And Membranesmentioning

confidence: 99%

“…During a PECVD process, the reactive species are not created by thermal fragmentation, as occurs in the most conventional CVD techniques, but rather it is accomplished within a plasma phase. 89 In principle, plasma is fed with the reactive gases and precursors and the species responsible for the deposition such as ions, radicals and neutrals are formed through the electronic collisions. PECVD processes are characterized by high versatility since precursors that are unreactive in other conditions can be activated in plasma phase.…”

Section: Plasma-enhanced Cvd Techniquesmentioning

confidence: 99%

Advances in surface modification and functionalization for tailoring the characteristics of thin films and membranes via chemical vapor deposition techniques

Mostafavi

Mishra

Gallucci

et al. 2023

J of Applied Polymer Sci

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Advanced materials are among the prime drivers for technological revolutions and transformation in quality of lives. Over time, several modification techniques have emerged enabling development of novel materials with extraordinary features. The present review aims to introduce various promising chemical and physical surface modification techniques instrumental for tailoring the characteristics of thin films and membranes. Meticulous discussions are provided over chemical vapor deposition (CVD) techniques evolved for addressing the demands for materials with desired functionalities. Also, essential criteria for the selection of substrates, modifying and precursor materials for an effective CVD modification are elaborated. Investigations are extended to unraveling the role of various process parameters on the quality and properties of deposition. Special attention is paid to the significance and performance of CVD‐based membranes and thin films for industrial applications ranging from desalination and water treatment to energy and environment, biomedical and life science as well as packaging. The goal has been to establish a scientific platform for a timely tracking of the prevailing trends in exploitation of CVD techniques and highlighting the unexplored opportunities. This also helps in identification of the scientific and technical gaps and setting directions for further progress in the fields of thin films and membranes.

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“…The impact of iCVD polymers p(EGDMA) and P(HEMA) on the initial growth of ZnO has also been reported. [ 92 ] This study used an oxygen plasma enhanced ALD process for ZnO growth. At first, the plasma etching of the iCVD polymer competes with ZnO formation.…”

Section: Device Fabricationmentioning

confidence: 99%

Designing Organic and Hybrid Surfaces and Devices with Initiated Chemical Vapor Deposition (iCVD)

Gleason

2023

Advanced Materials

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The initiated Chemical Vapor Deposition (iCVD) technique is an all‐dry method for designing organic and hybrid polymers. Unlike methods utilizing liquids or line‐of‐sight arrival, iCVD provides conformal surface modification over intricate geometries. Uniform, high‐purity, and pinhole‐free iCVD films can be grown with thicknesses ranging from > 15 μm to < 5 nm. The mild conditions permit damage‐free growth directly on to flexible substrates, 2D materials, and liquids. Novel iCVD polymer morphologies include nanostructured surfaces, nanoporosity, and shaped particles. The well‐established fundamentals of iCVD facilitate the systematic design and optimization of polymers and copolymers. The functional groups provide fine tuning of surface energy, surface charge, and responsive behavior. Further reactions of the functional groups in the polymers can yield either surface modification, compositional gradients through the layer thickness, or complete chemical conversion of the bulk film. The iCVD polymers have been integrated into multilayer device structures as desired for applications in sensing, electronics, optics, electrochemical energy storage, and biotechnology. For these devices, hybrids offer higher values of refractive index and dielectric constant. Multivinyl monomers typically produce ultrasmooth and pinhole‐free and mechanically deformable layers and robust interfaces which are especially promising for electronic skins and wearable optoelectronics.This article is protected by copyright. All rights reserved

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Shedding light on the initial growth of ZnO during plasma-enhanced atomic layer deposition on vapor-deposited polymer thin films

Cited by 12 publications

References 96 publications

Improved Electrical Resistivity of Atomic-Layer-Deposited Copper Thin Films on Polyimide Substrates by an In Situ ZnO Interlayer

Improved Electrical Resistivity of Atomic-Layer-Deposited Copper Thin Films on Polyimide Substrates by an In Situ ZnO Interlayer

Advances in surface modification and functionalization for tailoring the characteristics of thin films and membranes via chemical vapor deposition techniques

Designing Organic and Hybrid Surfaces and Devices with Initiated Chemical Vapor Deposition (iCVD)

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