SHF-range surface acoustic wave interdigital transducers using electron beam exposure

Yamanouchi, Kaoru; Cho, Y.; Meguro, T.

doi:10.1109/ultsym.1988.49352

Cited by 11 publications

(5 citation statements)

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“…With the significant advances in nanofabrication, inter-digital acoustic transducers can now be readily fabricated with sub-micron linewidth to generate SAWs with ultrahigh frequency up to tens of GHz [16][17][18][19][20][21][22] . At the same time, nanophotonic waveguides and cavities with very high-quality factors have been developed to confine light in sub-wavelength scale with extremely high optical power density 23,24 .…”

mentioning

confidence: 99%

Sub-optical wavelength acoustic wave modulation of integrated photonic resonators at microwave frequencies

Tadesse¹,

Li²

2014

Nat Commun

169

103

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Light-sound interactions have long been exploited in various acousto-optic devices based on bulk crystalline materials. Conventionally, these devices operate in megahertz frequency range where the acoustic wavelength is much longer than the optical wavelength and a long interaction length is required to attain significant coupling. With nanoscale transducers, acoustic waves with sub-optical wavelengths can now be excited to induce strong acoustooptic coupling in nanophotonic devices. Here we demonstrate microwave frequency surface acoustic wave transducers co-integrated with nanophotonic resonators on piezoelectric aluminum nitride substrates. Acousto-optic modulation of the resonance modes at above 10 GHz with the acoustic wavelength significantly below the optical wavelength is achieved. The phase and modal matching conditions in this scheme are investigated for efficient modulation. The new acousto-optic platform can lead to novel optical devices based on nonlinear Brillouin processes and provides a direct, wideband link between optical and microwave photons for microwave photonics and quantum optomechanics.

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mentioning

confidence: 99%

Sub-optical wavelength acoustic wave modulation of integrated photonic resonators at microwave frequencies

Tadesse¹,

Li²

2014

Nat Commun

169

103

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“…Mechanical attributes contributing to this expansion are ruggedness, light weight, and small size. Electrical merits feature the ability for signal processing at selected frequencies in the range from about 10 MHz up to a current reported value of 11 GHz [3].…”

Section: A Sa W-device Developmentmentioning

confidence: 99%

“…The impulse response model yields additional information on input and output impedance levels, as well as on the frequency sensitivity of individual electrodes. This model employs the Fourier-transform relations H(w) = roo -00 h(t)e -jhftdt (2) h(t) = roo -00 H(w)e,hftdf (3) for a linear system, with a one-to-one correspondence between H(w) and h(t), where h(t) is the impulse response. This is most useful in SAW-filter design, since the finger overlap pattern (apodization) of an lOT is a spatially-sampled approximation to its impulse response.…”

Section: E Modeling Of Sa W Filters With Bidirectionalldtsmentioning

confidence: 99%

“…Sources of noise in oscillators include perturbations due tooneor moreof a)white phase(f), flicker phase (11f), white frequency (11f 2 ), flicker frequency (11f 3 ), and random walk (1/(4), with frequency-dependent spectral slopes indicated. White frequency and flicker frequency are due to perturbations within the bandwidth of the feedback loop caused by white and flicker phase noise, respectively [246].…”

Section: B Single-mode Fixed-frequency Sa W Oscillatorsmentioning

confidence: 99%

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Applications of surface acoustic and shallow bulk acoustic wave devices

Campbell

1989

Proc. IEEE

112

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Applications of surface acoustic wave (SA W) and shallow bulk acoustic wave (SBA W) devices are reviewed. SA W-device coverage includes delay lines and filters operating at selected frequencies in the range from about 10 MHz to 11 GHz, modeling with singlecrystal piezoelectrics and layered structures, resonators and lowloss filters, comb filters and multiplexers, antenna duplexers, harmonic devices, chirp filters for pulse compression, coding with fixed and programmable transversal filters, Barker and quadraphase coding, adaptive filters, acoustic and acoustoelectric convolvers and correia tors for radar, spread spectrum, and packet radio, acoustooptic processors for Bragg modulation and spectrum analysis, real-time Fourier-transform, and cepstrum processors for radar and sonar, compressive receivers, Nyquist filters for microwave digital radio, clock-recovery filters for optical fiber communications, fixed-, tunable-, and multimode-oscillators, and frequency synthesizers, acoustic charge transport (ACT), and other SA W devices for signal processing on gallium arsenide, SA W sensors, and scanning acoustic microscopy. SBA W-devices applications include gigahertz delay lines, surface transverse wave resonators employing energy-trapping gratings, as well as oscillators with enhanced performance and capability.

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“…At that time, photolithography was the most convenient and economical technique, but scanningelectron-beam lithography was already suggested to be the future solution for complex high-resolution patterns. Yamanouchi et al (1988) produced 10 GHz SAW devices based on LiNb0 3 with 85 nm wide e-beam lithography IDT-fingers. Contrary to thin films, this substrate cannot be integrated in the CMOS technology.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of sub-100nm IDT SAW devices on insulating, semiconducting and conductive substrates

Iriarte¹,

Rodríguez-Madrid²,

Calle³

2012

Journal of Materials Processing Technology

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Keywords: E-beam lithography Insulating layers Charge accumulation Anti-static layerThis work describes the electron-beam (e-beam) lithography process developed to manufacture nano interdigital transducers (IDTs) to be used in high frequency (GHz) surface acoustic wave (SAW) applications. The combination of electron-beam (e-beam) lithography and lift-off process is shown to be effective in fabricating well-defined IDT finger patterns with a line width below 100 nm with a good yield. Working with insulating piezoelectric substrates brings about e-beam deflection. It is also shown how a very thin organic anti-static layer works well in avoiding this charge accumulation during e-beam lithography on the resist layer. However, the use of this anti-static layer is not required with the insulating piezoelectric layer laying on a semiconducting substrate such as highly doped silicon. The effect of the e-beam dose on a number of different layers (of insulating, insulating on semiconducting, semiconducting, and conductive natures) is provided. Among other advantages, the use of reduced e-beam doses increases the manufacturing time.The principal aim of this work is to explain the interrelation among e-beam dose, substrate nature and IDT structure. An extensive study of the e-beam lithography of long IDT-fingers is provided, in a wide variety of electrode widths, electrode numbers and electrode pitches. It is worthy to highlight that this work shows the influence of the e-beam dose on five substrates of different conductive nature.

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SHF-range surface acoustic wave interdigital transducers using electron beam exposure

Cited by 11 publications

References 1 publication

Sub-optical wavelength acoustic wave modulation of integrated photonic resonators at microwave frequencies

Sub-optical wavelength acoustic wave modulation of integrated photonic resonators at microwave frequencies

Applications of surface acoustic and shallow bulk acoustic wave devices

Fabrication of sub-100nm IDT SAW devices on insulating, semiconducting and conductive substrates

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