SHI induced damage in electrical properties of silicon NPN BJTs

Abstract

The investigation of radiation damage in Si microelectronic circuitry and devices are being carried out by various research groups globally. In particular the Si Bipolar junction transistors are very sensitive to high energetic radiation. In the present study, radiation response of NPN Bipolar junction transistor (2N3773) has been examined for 60 MeV B 4+ ion. Key electrical properties like Gummel, dc current gain and capacitancevoltage (C-V) characteristics of 60 MeV B 4+ ion irradiated transistor were studied before and after irradiation. Ion irradiation and subsequent electrical characterizations were performed at room temperature. Current voltage (I-V) measurements showed the increase in collector current for V BE ≤ 0.4 V as a function of fluence, which is due to B 4+ ion induced surface leakage currents. Base current is observed to be more sensitive than collector current and gain appears to be degraded with ion fluence. Also, C-V measurements shows that both built in potential and doping concentration increased significantly after irradiation.